Review of ultraviolet photodetectors based on micro/nano-structured wide bandgap semiconductor oxide
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摘要:
紫外探测技术是继红外探测与激光探测技术之后的又一项军民两用探测技术，有广阔的应用前景。真空光电倍增管和Si基光电二极管是常见的商品化紫外探测器，但是真空光电倍增管易受高温和电磁辐射干扰，需要在高压下工作；而Si基光电二极管需要昂贵的滤光片。宽禁带半导体紫外探测器克服了上述两种器件面临的一些问题，成为紫外探测器研究的热点。其中宽禁带氧化物材料，具有易于制备高响应高增益器件、有丰富的微纳结构、易于制备微纳器件的特点，引起了人们的广泛关注。本文对宽禁带半导体氧化物材料的微纳结构器件进行梳理，对近年来的一些相关研究进行了综述。其中涉及的氧化物材料包括ZnO，Ga2O3，SnO2，TiO2等，涉及的器件结构包括金属-半导体-金属型器件，肖特基结型器件，异质结型器件等。
Abstract:Ultraviolet photodetection technology is another dual-use detection technology after infrared detection and laser detection technology, which has broad application prospects. Vacuum photomultiplier tubes and Si-based photodiodes are common commercial UV detectors, but vacuum photomultiplier tubes are susceptible to high temperatures and electromagnetic radiation, and need to work under high pressure while Si-based photodiodes require expensive filters. Wide bandgap semiconductor ultraviolet photodetectors have overcome some of the problems faced by the above two devices, and are becoming the research hotspot. Among them, wide bandgap oxide materials have attracted extensive attention, due to the advantages of easy preparation for high response and high gain devices, and rich micro-structures and nano-structures. In this paper, ultraviolet photodetectors based on micro/nano-structured wide bandgap semiconductor oxide are combed, and some related researches in recent years are reviewed. The oxide materials involved include ZnO, Ga2O3, SnO2 and TiO2, etc. and the device structures involved include metal-semiconductor-metal devices, Schottky junction devices and heterojunction devices, etc.
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图 2 高质量ZnO微米棒的制备及表面形貌表征。(a) 硅微柱具有疏水侧壁和亲水顶部；(b) 由GaN衬底、前驱体溶液和微柱组成的三明治型组装系统；(c) 连续溶液层的烘干过程和毛细管桥的形成；(d)GaN衬底上的前体ZnO晶体阵列；(e) 以TiO2薄膜涂层为掩模的ZnO阵列前驱体；(f) 在GaN衬底上制备了高质量的ZnO晶体微棒阵列；分别具有不同直径的ZnO微棒阵列的SEM图像(g–h) 2.2 µm和(i–j) 1.3 µm；(k-n) 为通过激光扫描共聚焦显微镜获得的与(g–j)对应的ZnO微棒阵列图像(所有比例尺为1 µm)[16]
Figure 2. Fabrication of high-quality ZnO crystal microrod arrays and their morphological characterization. (a) The silicon micropillar template with lyophobic sidewalls and lyophilic tops. (b) The sandwich-type assembling system composed of the GaN substrate, precursor solution, and micropillar template. (c) The dewetting process of the continuous liquid layer and the formation of capillary bridges. (d) Precursor ZnO crystal arrays on the GaN substrate. (e) Precursor ZnO arrays with a coated TiO2 thin film as the mask. (f) As-fabricated high-quality ZnO crystal microrod arrays on the GaN substrate. SEM images of ZnO microrod arrays with different diameters of (g–h) 2.2 µm and (i–j) 1.3 µm, respectively. (k–n) Topographical images of ZnO microrod arrays corresponding to (g–j) obtained by the laser scanning confocal microscopy. (All scale bars, 1 µm)[16].
图 3 (a) 基于PET衬底的柔性ZnO MW/聚苯胺光电探测器的光学图像；(b) 在−1 V偏置和3 mW/cm2、365 nm紫外光照下，柔性ZnO MW/聚苯胺光电探测器在各种弯曲角度下的I-t曲线；(c) 在−1 V偏置和3 mW/cm2、365 nm紫外光照下，柔性ZnO-MW/聚苯胺光电探测器反复弯曲之后的I-t曲线[32]
Figure 3. (a) The optical image of a flexible ZnO MW/polyaniline photodetector on a PET substrate. (b) I-t curve of the flexible ZnO MW/polyaniline photodetector under 365 nm UV switching (3mW/cm2) at −1 V bias with various bending angles. (c) I-t curve of the flexible ZnO MW/polyaniline photodetector under 365 nm UV switching (3 mW/cm2) at −1 V bias after bending cycles[32]
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