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摘要:
基于单光子探测的距离选通成像系统中，需发射短脉冲激光并进行发射器和接收器之间的同步控制，使探测器工作在光子计数模式并在时间上进行积分，以完成成像操作。为了获得满足系统要求的短脉冲激光，同时减小系统体积、降低系统成本，本文提出将基于射频双极晶体管和基于阶跃恢复二极管SRD(结合短路传输线)两种产生窄脉冲电路应用于单光子距离选通成像系统。介绍了二者的原理与设计方法，进行了仿真验证、实物制作及测试，对脉冲发生器的特点、影响脉宽幅值的因素进行了分析。实物测试结果表明，基于晶体管方式可以产生上升时间为903.5 ps、下降时间为946.1 ps、脉冲宽度为824 ps、幅度为2.46 V的窄脉冲。基于SRD方式可以产生上升时间为456.8 ps、下降时间为458.3 ps、脉冲宽度为1.5 ns、幅度为2.38 V的窄脉冲，二者重复频率皆可达到50 MHz。利用这两种设计方法的任何一种配合外部电流驱动激光二极管都能够获得性能优良的短脉冲激光输出。
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关键词:
- 距离选通成像 /
- 双极性晶体管 /
- 阶跃恢复二极管(SRD) /
- 短脉冲激光
Abstract:In a distance-selected imaging system based on single-photon detection, a short-pulse laser is emitted and synchronization control between the transmitter and receiver is performed, and the detector operates in photon counting mode and integrates in time to complete the imaging. In order to obtain a short pulse laser that meets the system requirements while reducing the system’s size and cost, we propose to apply two types of narrow pulse generation circuits based on RF bipolar transistor and Step Recovery Diode (SRD) to single photon distance selective imaging systems. We introduce the principle and design method of both types and verify the system through simulation, physical fabrication and testing. The characteristics of the pulse generator and factors affecting its pulse width and amplitude are analyzed. The physical test results show that the transistor-based method can generate a narrow pulse with a rise time of 903.5 ps, a fall time of 946.1 ps, a pulse width of 824 ps, and an amplitude of 2.46 V; the SRD-based method can generate a narrow pulse with a rise time of 456.8 ps, a fall time of 458.3 ps, a pulse width of 1.5 ns, and an amplitude of 2.38 V; and the repetition frequency of both can reach 50 MHz. Both design methods can be used with external current-driven laser diodes to achieve excellent short pulse laser output.
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Key words:
- range-gated imaging /
- bipolar transistor /
- step recovery diode /
- short pulse laser
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图 1 晶体管窄脉冲产生电路原理图
Figure 1. Schematic diagram of narrow pulse generation circuit based on a transistor
图 2 电路中各个点响应仿真结果
Figure 2. Response simulation results of various points in the circuit
图 4 晶体管窄脉冲产生电路实物图
Figure 4. Real picture of a transistor-based narrow pulse generation circuit
图 5 不同条件下脉冲波形的实测结果
Figure 5. Measured results of pulse wareforms under different conditions
图 6 SRD正反偏时的内部结构和等效电路图
Figure 6. Forward/reverse bias block diagram and equivalent circuit of the SRD
图 7 SRD结合延时线产生窄脉冲电路原理图
Figure 7. Schematic diagram of SRD combined with a delay line to generate narrow pulse circuit
图 13 不同频率不同传输线长度时实测结果
Figure 13. Measured results at different frequencies and different transmission line lengths
图 14 传输线长度对于脉冲宽度和幅度的影响
Figure 14. Effect of transmission line length on pulse width and amplitude
表 1 其他情况下基于晶体管电路的测试数据
Table 1. Test data of transistor-based circuits in other cases
激励源频率/MHz 外加电源/V 脉冲宽度 脉冲幅度/V 10 5 1.186 ns 4.24 20 5 1.041 ns 3.68 50 5 824.0 ps 2.46 10 10 1.869 ns 8.16 20 10 1.508 ns 7.32 50 10 1.011 ns 6.04 
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表 2 其他情况下基于阶跃恢复二极管电路的测试数据
Table 2. Test data of step recovery diode-based circuits in other cases
激励源频率 传输线长度 脉冲脉宽 脉冲幅度 10 MHz 10 cm 1.493 ns 2.86 V 20 MHz 10 cm 1.498 ns 2.606 V 50 MHz 10 cm 1.525 ns 2.38 V 10 MHz 20 cm 2.884 ns 3.00 V 20 MHz 20 cm 2.923 ns 2.82 V 50 MHz 20 cm 2.878 ns 2.30 V
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