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High-performance transparent all-carbon photodetectors based on the semiconducting single-walled carbon nanotube/fullerene heterojunctions

ZHANG Luo-xi YIN Huan CHEN Yue ZHU Ming-kui SU Yan-jie

张罗茜, 尹欢, 陈越, 朱明奎, 苏言杰. 基于半导体性单壁碳纳米管/富勒烯异质结的高性能透明全碳光电探测器[J]. 中国光学(中英文), 2023, 16(5): 1243-1256. doi: 10.37188/CO.2022-0243
引用本文: 张罗茜, 尹欢, 陈越, 朱明奎, 苏言杰. 基于半导体性单壁碳纳米管/富勒烯异质结的高性能透明全碳光电探测器[J]. 中国光学(中英文), 2023, 16(5): 1243-1256. doi: 10.37188/CO.2022-0243
ZHANG Luo-xi, YIN Huan, CHEN Yue, ZHU Ming-kui, SU Yan-jie. High-performance transparent all-carbon photodetectors based on the semiconducting single-walled carbon nanotube/fullerene heterojunctions[J]. Chinese Optics, 2023, 16(5): 1243-1256. doi: 10.37188/CO.2022-0243
Citation: ZHANG Luo-xi, YIN Huan, CHEN Yue, ZHU Ming-kui, SU Yan-jie. High-performance transparent all-carbon photodetectors based on the semiconducting single-walled carbon nanotube/fullerene heterojunctions[J]. Chinese Optics, 2023, 16(5): 1243-1256. doi: 10.37188/CO.2022-0243

基于半导体性单壁碳纳米管/富勒烯异质结的高性能透明全碳光电探测器

详细信息
  • 中图分类号: TN15

High-performance transparent all-carbon photodetectors based on the semiconducting single-walled carbon nanotube/fullerene heterojunctions

doi: 10.37188/CO.2022-0243
Funds: Supported by the National Natural Science Foundation of China (No. 61974089)
More Information
    Author Bio:

    ZHANG Luo-xi (1997—), female, from Anyang, Henan Province, master degree, graduated fromJilin University with a bachelor degree in 2016, and obtained a master degreefrom Shanghai Jiaotong University in 2023, mainly engaged in the research of carbonnanotubes, optoelectronic devices and other fields. E-mail: luoxi-zhang@sjtu.edu.cn

    SU Yan-jie (1982—), male, from Shangqiu, Henan Province, Ph.D., associate researcher/doctoral supervisor, obtained his Ph.D. from Shanghai Jiaotong University in 2012, mainly engaged in the research of nanomaterials and devices. E-mail: yanjiesu@sjtu.edu.cn

    Corresponding author: yanjiesu@sjtu.edu.cn
  • 摘要:

    利用半导体性单壁碳纳米管(SWCNT)的高吸收系数、优异的光电特性和高载流子迁移率等特点,本文构筑了基于半导体SWCNT(sc-SWCNT)/富勒烯(C60)异质结的透明全碳宽光谱的场效应晶体管光电探测器。该器件的大部分结构均由碳基材料组成,全碳异质结作为导电沟道材料,金属性SWCNT作为源漏电极,氧化石墨烯(GO)作为介质层,在可见光波段的透光率均高于80%。电学测试结果表明:该光电探测器表现出了较强的栅控能力,实现了从405~1064 nm的可见光-近红外宽光谱响应,在5 mW/cm2的940 nm激光照射下,该器件光电响应率可以达到18.55 A/W,比探测率达到5.35×1011 Jones,同时,表现出了优异的循环稳定性。

     

  • 图 1  (a)器件结构示意图和(b)器件在可见光波段的透射率

    Figure 1.  (a) Schematic diagram of the device structure. (b) Transmittance of the device in visible band

    图 2  (a)旋涂法沉积的sc-SWCNT薄膜、(b) sc-SWCNT/C60异质结复合薄膜和(c)金属性SWCNT薄膜的扫描电子显微镜图

    Figure 2.  Scanning electron microscope images of (a) sc-SWCNT film deposited by spin coating, (b) sc-SWCNT/C60 heterogeneous composite film and (c) m-SWCNT film

    图 3  sc-SWCNT/C60薄膜的拉曼统计分析。在514 nm激光辐照下(a) sc-SWCNT (黑色)和(b) sc-SWCNT/C60 (蓝色)的拉曼光谱

    Figure 3.  Raman statistical analysis of sc-SWCNT /C60 film. Raman spectra of (a) sc-SWCNT (black) and (b) sc-SWCNT /C60 (blue) under 514 nm laser irradiation

    图 4  全碳器件的(a)Ids-Vgs曲线和(b)Ids-Vds曲线

    Figure 4.  (a) Ids-Vgs curve and (b) Ids-Vds curve of the all-carbon device

    图 5  全碳异质结器件在不同波长(405, 514, 650, 780, 860, 940, 1064 nm)激光照射下的(a) Ids-Vds 和(b) Ids-T曲线

    Figure 5.  (a) Ids-Vds curve and (b) Ids-T curve of the all-carbon device under 405, 514, 650, 780, 860, 940, 1064 nm laser irradiation

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出版历程
  • 收稿日期:  2022-11-24
  • 修回日期:  2022-12-12
  • 网络出版日期:  2023-04-04

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