Integrated nitride optoelectronic chip for motion detection and visible light communication
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摘要:
自然界中物体运动无处不在，随着智能汽车、6G移动通信的高速发展，对通信和运动探测传感融合的高集成度通感一体器件的需求日益增加。本文基于氮化镓多量子阱结构发光和探测并存的特点，提出了一种基于蓝宝石衬底外延生长氮化镓多量子阱材料的集成式光电子芯片，该芯片具有灵敏的运动探测功能及可见光通信功能。该光电子芯片的发射器向运动的目标物体发射蓝光波段可见光信号，经目标物体运动调制的可见光信号反射回光电子芯片的接收器部分，激发变化的光电流。分析接收器光电流变化，可探测以不同速度旋转的目标物体的运动情况，光电流曲线变化周期与目标物体旋转周期一致。本文还研究了光电子芯片的各项光电指标及可见光通信性能，该芯片可用作可见光通信系统收发终端，可以处理和传输芯片采集到的运动探测信号。基于氮化镓多量子阱材料的光电子芯片在低成本、低功耗、高集成度的光学运动探测领域提供了一条很有前途的途径，是一种具有实用价值的高集成度通感一体终端器件。
Abstract:The motion of objects is everywhere in nature. With the development of smart vehicle and 6G mobile communications, the demand for highly integrated integrated sensing and communication (ISAC) devices withcommunication and motion sensing is increasing. Based on the coexistence of luminescence and detection characteristics of GaN multiple quantum wells, an optoelectronic chip based on GaN on sapphire substrate is proposed in this paper. This chip has sensitive motion detection function and visible light communication function.The transmitter of the chip emits visible light in blue band to the moving target object. The visible light signal modulated by the motion of the target object is reflected back to the receiver of the chip to stimulate the changing photocurrent. By analyzing the changing photocurrent, the motion of the target object rotating at different speeds can be detected. The change period of the photocurrent curve is consistent with the rotation period of the target object. This paper also studies the visible light communication performance of the optoelectronic chip. The optoelectronic chip can be used as a visible light communication transceiver terminal, can also process and transmit the motion detection signals collected by the chip. The optoelectronic chip based on GaN multi-quantum wells provides a promising way in the field of low-cost, low-power, highly integrated optical motion sensing applications. It is a highly integrated ISAC terminal device with significant value.
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图 1 （a）带有多量子阱结构的GaN材料可实现光电/电光信号的双向转换，（b）III族氮化物多量子阱材料的分层结构
Figure 1. (a) GaN materials with multiple quantum wells can realize the bi-directional conversion of optoelectronic / electro-optic signals, (b) Layered structure of III-nitride materials with multiple quantum wells
图 2 （a） III族氮化物光电子芯片示意图，（b） III族氮化物光电子芯片的运动探测系统示意图
Figure 2. (a) Schematic diagram of III-nitride optoelectronic chip, (b) Schematic diagram of motion detection system for III-nitride optoelectronic chip
图 3 III族氮化物光电子芯片的加工流程图
Figure 3. Fabrication process of III-nitride optoelectronic chip
图 4 （a） 光电子芯片的整体光镜图，（b） 发射/接收区域光镜图，（c）DBR层电子显微镜图，（d）单个发射器/接收器的局部放大光镜图
Figure 4. (a) Optical microscope image of optoelectronic chip, (b) optical microscope image of transmitting / receiving region, (c) SEM image of DBR layer, (d) the local magnification light optical microscope image of a single transmitter/receiver
图 5 (a) 发射器/接收器的电流-电压（I-V）曲线，(b) 电容-电压（C-V）曲线
Figure 5. (a) Current-voltage curve of transmitter/receiver, (b) capacitance-voltage curve of transmitter/receiver
图 6 光电子芯片发射器的电致发光（EL）谱和接收器的探测谱
Figure 6. Electroluminescence (EL) spectrum of transmitter and detection spectrum of receiver
图 8 光电子芯片的运动探测系统示意图
Figure 8. Schematic of motion detection system of optoelectronic chip
图 9 发射器偏压为2.9 V时不同转速反射镜运动下接收器的探测光电流
Figure 9. Receiver photocurrent under different rotating speed of mirror when bias voltage of transmitter is 2.9 V
图 10 反射镜在200rpm的运动转速下发射器偏压设置为2.7 V~2.9 V时接收器的探测光电流
Figure 10. Receiver photocurrent under 200rpm rotating speed of mirror when bias voltage of transmitter is 2.7 V-2.9 V.
图 11 （a）变速电机和（b）变速运动探测的光电流曲线
Figure 11. (a) Variable speed motor and (b) photocurrent curve of variable speed motion detection
图 12 （a）作为发射器的光电子芯片的可见光通信测试系统，作为发射器的光电子芯片在25 Mbps传输速率下的收发信号波形（b）和眼图（c），（d）不同电压下作为发射器的光电子芯片的3 dB带宽
Figure 12. (a) Visible light communication test system of optoelectronic chip as transmitter, signal waveform (b) and eye diagram (c) of optoelectronic chip as transmitter at 25 Mbps, (d) 3 dB bandwidth of optoelectronic chip as transmitter with different bias voltage.
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