氮化镓基Micro-LED侧壁对外量子效率的影响及侧壁处理技术综述

邝海; 黄振; 熊志华; 刘丽

doi:10.37188/CO.2023-0091

氮化镓基Micro-LED侧壁对外量子效率的影响及侧壁处理技术综述

doi: 10.37188/CO.2023-0091

江西科技师范大学江西省光电子与通信重点实验室, 江西南昌 330038

基金项目: 江西省教育厅科学技术研究项目（No. GJJ2201338)；国家自然科学基金（No. 12364013)；江西科技师范大学博士科研启动基金项目（No.2019BSQD020)；中央引导地方科技发展资金项目（No. 2022ZDD03088)

详细信息

作者简介:
邝　海(1983—)，女，湖南临武人，博士，讲师， 2019年于南昌大学获得博士学位，现为江西科技师范大学江西省光电子与通信重点实验室讲师，主要从事半导体发光材料与器件等方面的研究。E-mail: haizi411@126.com

熊志华(1974—)，男，江西南昌人，博士，教授，2008年于南昌大学获得博士学位，现为江西科技师范大学江西省光电子与通信重点实验室主任，主要从事半导体光电材料等方面的研究。E-mail: xiong_zhihua@126.com

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出版历程
- 收稿日期: 2023-05-15
- 修回日期: 2023-06-02
- 网络出版日期: 2023-09-26

A review of the effect of GaN-Based Micro-LED sidewall on external quantum efficiency and sidewall treatment techniques

Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science Technology Normal University, Nanchang 330038, China

Funds: Supported by Science and Technology Research Project of Jiangxi Education Department (No. GJJ2201338); National Natural Science Foundation of China (No. 12364013); Doctoral Research Foundation of Jiangxi Science and Technology Normal University (No. 2019BSQD020); Government Guides Local Science and Technology Development Funds(No. 2022ZDD03088)

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Corresponding author: haizi411@126.com

摘要

摘要:
氮化镓基Micro-LED具备高亮度、高响应频率、低功耗等优点，是未来显示技术和可见光通信系统的理想选择，但是目前外量子效率（EQE）低下这一问题严重影响其规模化量产及进一步应用。为了突破EQE低下这一瓶颈，通过分析Micro-LED外量子效率的影响因素，得知EQE下降的主要原因包括侧壁缺陷引起的载流子损耗及非辐射复合。总结了侧壁缺陷对载流子输运及复合的影响。综述了目前常用的侧壁处理技术及修复方法，指出现有侧壁处理方法较为笼统、针对性不足且载流子与侧壁缺陷的作用机理并不十分清楚。提出应深入系统地研究侧壁缺陷种类和分布、载流子与侧壁缺陷作用机制及侧壁处理过程中的缺陷修复模式。本文为提高外量子效率、加快Micro-LED商业化量产进程提供设计思路和理论依据。
- 侧壁缺陷 /
- 微发光二极管 /
- 外量子效率 /
- 载流子 /
- 侧壁钝化
Abstract:
Micro-LEDs offers the benefits of high brightness, high response frequency, and low power consumption, making them an attractive candidate for future display technologies and Visible Light Communication (VLC) systems. Nonetheless, their low External Quantum Efficiency (EQE) currently impedes their scaled mass production and further applications. In order to break through the bottleneck of low EQE, we conducted an analysis of Micro-LED external quantum efficiency’s contributing factors. The influencing factors for EQE are analyzed. It is concluded that the carrier loss and non-radiative recombination caused by sidewall defects are the main reasons for the decrease in EQE. In addition, we summarized the impact of sidewall defects on carrier transport and composites, and we also reviewed the commonly used sidewall treatment technology and repair methods, and pointed out that the existing sidewall treatment methods are helpful but insufficient for improving EQE, and the mechanism of carrier interaction with sidewall defects is not very clear. It is suggested to carry out a thorough and systematic study on the types and distribution of sidewall defects, the mechanism of carrier and sidewall defects, and the defect repair mode in the sidewall treatment process. Finally, future development trends are projected. This paper offers design ideas and theoretical foundations to enhance the external quantum efficiency and accelerate the process of commercialization and mass production of Micro-LEDs.
- defects on sidewall /
- micro-LED /
- external quantum efficiency /
- carriers /
- surface passivation

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图 1 Micro-LED结构示意图（改编自文献[1]）

Figure 1. Schematic diagram of Micro-LEDs Structure (adapted from Ref.[1])

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图 2 用于模拟和进行效率分析的垂直结构InGaN/GaN 基蓝色发光二极管的示意图（改编自文献[35]）

Figure 2. Schematic diagram of the InGaN/GaN-based blue light-emitting-diode used for the simulation and the analysis of the efficiency (adapted from Ref.[35])

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图 3 ICP腐蚀后ITO层的横断面扫描电子显微镜（SEM）图像^[62]

Figure 3. Cross-sectional scanning electron microscopy (SEM) image of ITO layer after exposing to ICP etch ^[62]

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图 4 提取系数A(a)和C (b)随着LED尺寸的变化图^[53]

Figure 4. Extracted coefficients A (a) and C (b) plotted versus LED size^[53]

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图 5 (a)完整的Micro-LED示意图；(b)侧壁带缺陷的Micro-LED示意图；(c)样品的I-V曲线；(d)样品的P电极附近的载流子浓度变化（改编自文献[42]）

Figure 5. Schematic diagrams for (a) LED without sidewall damages and (b) LED with sidewall damages; (c) the current-voltage characteristics in semi-log scale for LEDs; (d) changes in carrier concentration profiles near the P-region for LED (adapted from Ref. [42])

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图 6 （a）样品在1 A/cm²下的电致发光图像；（b）、（c）不同尺寸芯片的EQE随注入电流密度的变化（改编自文献[62]）

Figure 6. (a) Electroluminescence images of Micro-LEDs at 1 A/cm²; (b), (c) variation of EQE with injection current density for different chip sizes (adapted from Ref.[62])

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图 7 离子注入后Micro-LED表面变化示意图。 (a)表面化学结构发生变化；(b)原子排列、表面修复和空穴缺陷填充；(c) GaN中的钝化层^[70]。

Figure 7. Schematic diagram of Micro-LED surface changes after ion implantation. (a) Changes in surface chemical structure; (b) atomic alignment, surface repair and cavity defect filling; (c) passivation layer in GaN^[70]

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表 1 Micro-LED与OLED、LCD比较^{[4, 9]}

Table 1. Performance comparison of Micro-LED, OLED and LCD ^{[4, 9]}

	Micro-LED	OLED	LCD
Mechanism	Self-emissive	Self-emissive	Backlight
Luminous efficacy	High	Medium	Low
Power consumption	Low	Medium	High
Lifetime	Long	Medium	Long
Response time	ns	μs	ms
Cost	High	Medium	Low

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