氮化镓基Micro-LED侧壁对外量子效率的影响及侧壁处理技术综述

邝海; 黄振; 熊志华; 刘丽

doi:10.37188/CO.2023-0091

氮化镓基Micro-LED侧壁对外量子效率的影响及侧壁处理技术综述

doi: 10.37188/CO.2023-0091

江西科技师范大学江西省光电子与通信重点实验室, 江西南昌 330038

基金项目: 江西省教育厅科学技术研究项目（No. GJJ2201338)；国家自然科学基金（No. 12364013)；江西科技师范大学博士科研启动基金项目（No.2019BSQD020)；中央引导地方科技发展资金项目（No. 2022ZDD03088)

详细信息

作者简介:
邝　海(1983—)，女，湖南临武人，博士，讲师， 2019年于南昌大学获得博士学位，现为江西科技师范大学江西省光电子与通信重点实验室讲师，主要从事半导体发光材料与器件等方面的研究。E-mail: haizi411@126.com

熊志华(1974—)，男，江西南昌人，博士，教授，2008年于南昌大学获得博士学位，现为江西科技师范大学江西省光电子与通信重点实验室主任，主要从事半导体光电材料等方面的研究。E-mail: xiong_zhihua@126.com

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出版历程
- 收稿日期: 2023-05-15
- 修回日期: 2023-06-02
- 网络出版日期: 2023-09-26

A review of the effect of GaN-Based Micro-LED sidewall on external quantum efficiency and sidewall treatment techniques

Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science Technology Normal University, Nanchang 330038, China

Funds: Supported by Science and Technology Research Project of Jiangxi Education Department (No. GJJ2201338); National Natural Science Foundation of China (No. 12364013); Doctoral Research Foundation of Jiangxi Science and Technology Normal University (No. 2019BSQD020); Government Guides Local Science and Technology Development Funds(No. 2022ZDD03088)

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Corresponding author: haizi411@126.com

摘要

摘要:
氮化镓基Micro-LED具备高亮度、高响应频率、低功耗等优点，是未来显示技术和可见光通信系统的理想选择，但是目前外量子效率（EQE）低下这一问题严重影响其规模化量产及进一步应用。为了突破EQE低下这一瓶颈，通过分析Micro-LED外量子效率的影响因素，得知EQE下降的主要原因包括侧壁缺陷引起的载流子损耗及非辐射复合。总结了侧壁缺陷对载流子输运及复合的影响。综述了目前常用的侧壁处理技术及修复方法，指出现有侧壁处理方法较为笼统、针对性不足且载流子与侧壁缺陷的作用机理并不十分清楚。提出应深入系统地研究侧壁缺陷种类和分布、载流子与侧壁缺陷作用机制及侧壁处理过程中的缺陷修复模式。本文为提高外量子效率、加快Micro-LED商业化量产进程提供设计思路和理论依据。
- 侧壁缺陷 /
- 微发光二极管 /
- 外量子效率 /
- 载流子 /
- 侧壁钝化
Abstract:
Micro-LEDs offers the benefits of high brightness, high response frequency, and low power consumption, making them an attractive candidate for future display technologies and Visible Light Communication (VLC) systems. Nonetheless, their low External Quantum Efficiency (EQE) currently impedes their scaled mass production and further applications. In order to break through the bottleneck of low EQE, we conducted an analysis of Micro-LED external quantum efficiency’s contributing factors. The influencing factors for EQE are analyzed. It is concluded that the carrier loss and non-radiative recombination caused by sidewall defects are the main reasons for the decrease in EQE. In addition, we summarized the impact of sidewall defects on carrier transport and composites, and we also reviewed the commonly used sidewall treatment technology and repair methods, and pointed out that the existing sidewall treatment methods are helpful but insufficient for improving EQE, and the mechanism of carrier interaction with sidewall defects is not very clear. It is suggested to carry out a thorough and systematic study on the types and distribution of sidewall defects, the mechanism of carrier and sidewall defects, and the defect repair mode in the sidewall treatment process. Finally, future development trends are projected. This paper offers design ideas and theoretical foundations to enhance the external quantum efficiency and accelerate the process of commercialization and mass production of Micro-LEDs.
- defects on sidewall /
- micro-LED /
- external quantum efficiency /
- carriers /
- surface passivation

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图 1 Micro-LED结构示意图（改编自文献[1]）

Figure 1. Schematic diagram of Micro-LEDs Structure (adapted from Ref.[1])

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图 2 用于模拟和进行效率分析的垂直结构InGaN/GaN 基蓝色发光二极管的示意图（改编自文献[35]）

Figure 2. Schematic diagram of the InGaN/GaN-based blue light-emitting-diode used for the simulation and the analysis of the efficiency (adapted from Ref.[35])

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图 3 ICP腐蚀后ITO层的横断面扫描电子显微镜（SEM）图像^[62]

Figure 3. Cross-sectional scanning electron microscopy (SEM) image of ITO layer after exposing to ICP etch ^[62]

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图 4 提取系数A(a)和C (b)随着LED尺寸的变化图^[53]

Figure 4. Extracted coefficients A (a) and C (b) plotted versus LED size^[53]

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图 5 (a)完整的Micro-LED示意图；(b)侧壁带缺陷的Micro-LED示意图；(c)样品的I-V曲线；(d)样品的P电极附近的载流子浓度变化（改编自文献[42]）

Figure 5. Schematic diagrams for (a) LED without sidewall damages and (b) LED with sidewall damages; (c) the current-voltage characteristics in semi-log scale for LEDs; (d) changes in carrier concentration profiles near the P-region for LED (adapted from Ref. [42])

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图 6 （a）样品在1 A/cm²下的电致发光图像；（b）、（c）不同尺寸芯片的EQE随注入电流密度的变化（改编自文献[62]）

Figure 6. (a) Electroluminescence images of Micro-LEDs at 1 A/cm²; (b), (c) variation of EQE with injection current density for different chip sizes (adapted from Ref.[62])

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图 7 离子注入后Micro-LED表面变化示意图。 (a)表面化学结构发生变化；(b)原子排列、表面修复和空穴缺陷填充；(c) GaN中的钝化层^[70]。

Figure 7. Schematic diagram of Micro-LED surface changes after ion implantation. (a) Changes in surface chemical structure; (b) atomic alignment, surface repair and cavity defect filling; (c) passivation layer in GaN^[70]

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表 1 Micro-LED与OLED、LCD比较^{[4, 9]}

Table 1. Performance comparison of Micro-LED, OLED and LCD ^{[4, 9]}

	Micro-LED	OLED	LCD
Mechanism	Self-emissive	Self-emissive	Backlight
Luminous efficacy	High	Medium	Low
Power consumption	Low	Medium	High
Lifetime	Long	Medium	Long
Response time	ns	μs	ms
Cost	High	Medium	Low

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参考文献(85)

[1]	JIN S X, LI J, LI J Z, et al. GaN microdisk light emitting diodes[J]. Applied Physics Letters, 2000, 76(5): 631-633. doi: 10.1063/1.125841
[2]	蒋成伟, 沙源清, 袁佳磊, 等. 电致发光的完全悬空超薄硅衬底氮化镓基蓝光LED器件的制备与表征[J]. 中国光学,2021,14(1):153-162. doi: 10.37188/CO.2020-0148 JIANG CH W, SHA Y Q, YUAN J L, et al. Fabrication and characterization of an LED based on a GaN-on-silicon platform with an ultra-thin freestanding membrane in the blue range[J]. Chinese Optics, 2021, 14(1): 153-162. (in Chinese) doi: 10.37188/CO.2020-0148
[3]	ZHANG K, LIU Y B, KWOK H S, et al. Investigation of electrical properties and reliability of GaN-based micro-LEDs[J]. Nanomaterials, 2020, 10(4): 689. doi: 10.3390/nano10040689
[4]	LIU ZH J, LIN C H, HYUN B R, et al. Micro-light-emitting diodes with quantum dots in display technology[J]. Light:Science & Applications, 2020, 9(1): 23.
[5]	WOODGATE G J, HARROLD J. P-101: Micro-optical systems for micro-LED displays[J]. SID Symposium Digest of Technical Papers, 2018, 49(1): 1559-1562. doi: 10.1002/sdtp.12285
[6]	YIN Y M, HU Z P, ALI M U, et al. Alleviating the crosstalk effect via a fine-moulded light-blocking matrix for colour-converted micro-LED display with a 122% NTSC gamut[J]. Light: Advanced Manufacturing, 2022, 3: 36.
[7]	殷录桥, 张雪松, 任开琳, 等. 考虑小尺寸效应的Micro-LED驱动结构设计[J]. 光学学报,2023,43(2):0223003. YIN L Q, ZHANG X S, REN K L, et al. Design of micro-LED driving structure considering small size effect[J]. Acta Optica Sinica, 2023, 43(2): 0223003. (in Chinese)
[8]	HUANG Y G, HSIANG E L, DENG M Y, et al. Mini-LED, Micro-LED and OLED displays: present status and future perspectives[J]. Light:Science & Applications, 2020, 9(1): 105.
[9]	LEE H E, SHIN J H, PARK J H, et al. Micro light-emitting diodes for display and flexible biomedical applications[J]. Advanced Functional Materials, 2019, 29(24): 1808075. doi: 10.1002/adfm.201808075
[10]	RAJBHANDARI S, MCKENDRY J J D, HERRNSDORF J, et al. A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications[J]. Semiconductor Science and Technology, 2017, 32(2): 023001. doi: 10.1088/1361-6641/32/2/023001
[11]	XIONG J, WU S T. Planar liquid crystal polarization optics for augmented reality and virtual reality: from fundamentals to applications[J]. eLight, 2021, 1: 3.
[12]	LEE V W, TWU N, KYMISSIS I. Micro-LED technologies and applications[J]. Information Display, 2016, 32(6): 16-23. doi: 10.1002/j.2637-496X.2016.tb00949.x
[13]	TEMPLIER F. GaN-based emissive microdisplays: a very promising technology for compact, ultra-high brightness display systems[J]. Journal of the Society for Information Display, 2016, 24(11): 669-675. doi: 10.1002/jsid.516
[14]	LIU Y T, LIAO K Y, LIN C L, et al. 66-2: Invited Paper: PixeLED display for transparent applications[J]. SID Symposium Digest of Technical Papers, 2018, 49(1): 874-875.
[15]	LI K H, FU W Y, CHOI H W. Chip-scale GaN integration[J]. Progress in Quantum Electronics, 2020, 70: 100247. doi: 10.1016/j.pquantelec.2020.100247
[16]	MONAVARIAN M, RASHIDI A, ARAGON A A, et al. Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes[J]. Applied Physics Letters, 2018, 112(4): 041104. doi: 10.1063/1.5019730
[17]	RASHIDI A, MONAVARIAN M, ARAGON A, et al. High-speed nonpolar InGaN/GaN LEDs for visible-light communication[J]. IEEE Photonics Technology Letters, 2017, 29(4): 381-384. doi: 10.1109/LPT.2017.2650681
[18]	ARVANITAKIS G N, BIAN R, MCKENDRY J J D, et al. Gb/s underwater wireless optical communications using series-connected GaN micro-LED arrays[J]. IEEE Photonics Journal, 2020, 12(2): 7901210.
[19]	蒋府龙, 许非凡, 刘召军, 等. 氮化镓基Micro-LED显示技术研究进展[J]. 人工晶体学报,2020,49(11):2013-2023. doi: 10.3969/j.issn.1000-985X.2020.11.005 JIANG F L, XU F F, LIU ZH J, et al. Development of GaN-based micro-LED display technology[J]. Journal of Synthetic Crystals, 2020, 49(11): 2013-2023. (in Chinese) doi: 10.3969/j.issn.1000-985X.2020.11.005
[20]	严子雯, 严群, 李典伦, 等. 高度集成的μLED显示技术研究进展[J]. 发光学报,2020,41(10):1309-1317. doi: 10.37188/CJL.20200191 YAN Z W, YAN Q, LI D L, et al. Research progress of high integration density μLED display technology[J]. Chinese Journal of Luminescence, 2020, 41(10): 1309-1317. (in Chinese) doi: 10.37188/CJL.20200191
[21]	ZHOU X J, TIAN P F, SHER C W, et al. Growth, transfer printing and colour conversion techniques towards full-colour micro-LED display[J]. Progress in Quantum Electronics, 2020, 71: 100263. doi: 10.1016/j.pquantelec.2020.100263
[22]	WU T ZH, SHER C W, LIN Y, et al. Mini-LED and micro-LED: promising candidates for the next generation display technology[J]. Applied Sciences, 2018, 8(9): 1557. doi: 10.3390/app8091557
[23]	JIANG H X, LIN J Y. Nitride micro-LEDs and beyond-a decade progress review[J]. Optics Express, 2013, 21(S3): A475-A484. doi: 10.1364/OE.21.00A475
[24]	董冰, 佟首峰, 张鹏, 等. 20 m水下无线蓝光LED通信系统样机设计[J]. 中国光学,2021,14(6):1451-1458. doi: 10.37188/CO.2020-0190 DONG B, TONG SH F, ZHANG P, et al. Design of a 20 m underwater wireless optical communication system based on blue LED[J]. Chinese Optics, 2021, 14(6): 1451-1458. (in Chinese) doi: 10.37188/CO.2020-0190
[25]	CHENG D, WANG Q, LIU Y, et al. Design and manufacture AR head-mounted displays: A review and outlook[J]. Light: Advanced Manufacturing, 2021, 2(3): 350-369.
[26]	PARK J H, LEE B. Holographic techniques for augmented reality and virtual reality near-eye displays[J]. Light: Advanced Manufacturing, 2022, 3(1): 137-150.
[27]	YUSUKE S, KAZUO S, Daisuke B, et al. Holographic augmented reality display with conical holographic optical element for wide viewing zone[J]. Light: Advanced Manufacturing, 2022, 3(1): 26-34.
[28]	BEMARD C K, MARIA P. Holographic optics in planar optical systems for next generation small form factor mixed reality headsets[J]. Light: Advanced Manufacturing, 2022, 3(4): 771-801.
[29]	Global micro-LED market with covid-19 impact analysis by application (display (smartwatch, NTE device, smartphone and tablet, television, digital signage), lighting (general, automotive)), display panel size, vertical and region-forecast to 2027[EB/OL]. (2021-12)[2023-06-16].https://www.researchandmarkets.com/reports/5067415/global-micro-LED-market-with-covid-19-impact#pos-0.
[30]	JIANG H X, JIN S X, LI J, et al. III-nitride blue microdisplays[J]. Applied Physics Letters, 2001, 78(9): 1303-1305. doi: 10.1063/1.1351521
[31]	JIN S X, LI J, LIN J Y, et al. InGaN/GaN quantum well interconnected microdisk light emitting diodes[J]. Applied Physics Letters, 2000, 77(20): 3236-3238. doi: 10.1063/1.1326479
[32]	ZHU G Q, LIU Y J, MING R, et al. Mass transfer, detection and repair technologies in micro-LED displays[J]. Science China Materials, 2022, 65(8): 2128-2153. doi: 10.1007/s40843-022-2110-2
[33]	HANG SH, CHUANG C M, ZHANG Y H, et al. A review on the low external quantum efficiency and the remedies for GaN-based micro-LEDs[J]. Journal of Physics D:Applied Physics, 2021, 54(15): 153002. doi: 10.1088/1361-6463/abd9a3
[34]	WIERER J J JR, TANSU N. III-nitride micro-LEDs for efficient emissive displays[J]. Laser & Photonics Reviews, 2019, 13(9): 1900141.
[35]	LU SH Q, LI J CH, HUANG K, et al. Designs of InGaN micro-LED structure for improving quantum efficiency at low current density[J]. Nanoscale Research Letters, 2021, 16(1): 99. doi: 10.1186/s11671-021-03557-4
[36]	VIREY E H, BARON N. 45-1: Status and prospects of microLED displays[J]. SID Symposium Digest of Technical Papers, 2018, 49(1): 593-596. doi: 10.1002/sdtp.12415
[37]	ZHANG SH N, ZHANG J L, GAO J D, et al. Efficient emission of InGaN-based light-emitting diodes: toward orange and red[J]. Photonics Research, 2020, 8(11): 1671-1675. doi: 10.1364/PRJ.402555
[38]	ZHANG L, OU F, CHONG W C, et al. Wafer-scale monolithic hybrid integration of Si-based IC and III-V epi-layers-A mass manufacturable approach for active matrix micro-LED micro-displays[J]. Journal of the Society for Information Display, 2018, 26(3): 137-145. doi: 10.1002/jsid.649
[39]	JUNG T, CHOI J H, JANG S H, et al. 32-1: Invited Paper: Review of micro-light-emitting-diode technology for micro-display applications[J]. SID Symposium Digest of Technical Papers, 2019, 50(1): 442-446. doi: 10.1002/sdtp.12951
[40]	COK R S, MEITL M, ROTZOLL R, et al. Inorganic light-emitting diode displays using micro-transfer printing[J]. Journal of the Society for Information Display, 2017, 25(10): 589-609. doi: 10.1002/jsid.610
[41]	CORBETT B, LOI R, ZHOU W D, et al. Transfer print techniques for heterogeneous integration of photonic components[J]. Progress in Quantum Electronics, 2017, 52: 1-17. doi: 10.1016/j.pquantelec.2017.01.001
[42]	KOU J Q, SHEN C C, SHAO H, et al. Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes[J]. Optics Express, 2019, 27(12): A643-A653. doi: 10.1364/OE.27.00A643
[43]	HWANG D, MUGHAL A, PYNN C D, et al. Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDs[J]. Applied Physics Express, 2017, 10(3): 032101. doi: 10.7567/APEX.10.032101
[44]	BULASHEVICH K A, KARPOV S Y. Impact of surface recombination on efficiency of III-nitride light-emitting diodes[J]. Physica Status Solidi (RRL)-Rapid Research Letters, 2016, 10(6): 480-484. doi: 10.1002/pssr.201600059
[45]	TIAN P F, MCKENDRY J J D, GONG ZH, et al. Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes[J]. Applied Physics Letters, 2012, 101(23): 231110. doi: 10.1063/1.4769835
[46]	ZHAO CH, NG T K, PRABASWARA A, et al. An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination[J]. Nanoscale, 2015, 7(40): 16658-16665. doi: 10.1039/C5NR03448E
[47]	OLIVIER F, TIRANO S, DUPRÉ L, et al. Influence of size-reduction on the performances of GaN-based micro-LEDs for display application[J]. Journal of Luminescence, 2017, 191: 112-116. doi: 10.1016/j.jlumin.2016.09.052
[48]	KONOPLEV S S, BULASHEVICH K A, KARPOV S Y. From large-size to micro-LEDs: scaling trends revealed by modeling[J]. Physica Status Solidi (A), 2018, 215(10): 1700508. doi: 10.1002/pssa.201700508
[49]	江风益, 刘军林, 王立, 等. 硅衬底高光效GaN基蓝色发光二极管[J]. 中国科学:物理学力学天文学,2015,45(6):067302. JIANG F Y, LIU J L, WANG L, et al. High optical efficiency GaN based blue LED on silicon substrate[J]. Scientia Sinica Physica, Mechanica & Astronomica, 2015, 45(6): 067302. (in Chinese)
[50]	CHOI H W, JEON C W, DAWSON M D, et al. Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes[J]. Journal of Applied Physics, 2003, 93(10): 5978-5982. doi: 10.1063/1.1567803
[51]	ZHANG Y Y, GUO E Q, LI ZH, et al. Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes[J]. IEEE Photonics Technology Letters, 2012, 24(4): 243-245. doi: 10.1109/LPT.2011.2177251
[52]	KARPOV S. ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review[J]. Optical and Quantum Electronics, 2015, 47(6): 1293-1303. doi: 10.1007/s11082-014-0042-9
[53]	OLIVIER F, DAAMI A, LICITRA C, et al. Shockley-Read-Hall and auger non-radiative recombination in GaN based LEDs: a size effect study[J]. Applied Physics Letters, 2017, 111(2): 022104. doi: 10.1063/1.4993741
[54]	WIERER J J JR, TSAO J Y, SIZOV D S. Comparison between blue lasers and light-emitting diodes for future solid-state lighting[J]. Laser & Photonics Reviews, 2013, 7(6): 963-993.
[55]	LIU A CH, SINGH K J, HUANG Y M, et al. Increase in the efficiency of III-nitride micro-LEDs: atomic-layer deposition and etching[J]. IEEE Nanotechnology Magazine, 2021, 15(3): 18-34. doi: 10.1109/MNANO.2021.3066393
[56]	CHU CH SH, TIAN K K, ZHANG Y H, et al. Progress in external quantum efficiency for III-nitride based deep ultraviolet light-emitting diodes[J]. Physica Status Solidi (A), 2019, 216(4): 1800815. doi: 10.1002/pssa.201800815
[57]	ZHANG Z H, ZHANG Y H, BI W G, et al. On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates[J]. Physica Status Solidi (A), 2016, 213(12): 3078-3102. doi: 10.1002/pssa.201600281
[58]	PEARTON S J. Characterization of damage in electron cyclotron resonance plasma etched compound semiconductors[J]. Applied Surface Science, 1997, 117-118: 597-604. doi: 10.1016/S0169-4332(97)80149-3
[59]	LEE J M, HUH C, KIM D J, et al. Dry-etch damage and its recovery in InGaN/GaN multi-quantum-well light-emitting diodes[J]. Semiconductor Science and Technology, 2003, 18(6): 530-534. doi: 10.1088/0268-1242/18/6/323
[60]	BOUSSADI Y, ROCHAT N, BARNES J P, et al. Investigation of sidewall damage induced by reactive ion etching on AlGaInP mesa for micro-LED application[J]. Journal of Luminescence, 2021, 234: 117937. doi: 10.1016/j.jlumin.2021.117937
[61]	TIAN W Y, LI J H. Size-dependent optical-electrical characteristics of blue GaN/InGaN micro-light-emitting diodes[J]. Applied Optics, 2020, 59(29): 9225-9232. doi: 10.1364/AO.405572
[62]	WONG M S, HWANG D, ALHASSAN A I, et al. High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition[J]. Optics Express, 2018, 26(16): 21324-21331. doi: 10.1364/OE.26.021324
[63]	JIANG F L, HYUN B R, ZHANG Y, et al. Role of intrinsic surface states in efficiency attenuation of GaN-based micro-light-emitting-diodes[J]. Physica Status Solidi (RRL)-Rapid Research Letters, 2021, 15(2): 2000487. doi: 10.1002/pssr.202000487
[64]	LEE D H, LEE J H, PARK J S, et al. Improving the leakage characteristics and efficiency of GaN-based micro-light-emitting diode with optimized passivation[J]. ECS Journal of Solid State Science and Technology, 2020, 9(5): 055001. doi: 10.1149/2162-8777/ab915d
[65]	DING K, AVRUTIN V, IZYUMSKAYA N, et al. Micro-LEDs, a manufacturability perspective[J]. Applied Sciences, 2019, 9(6): 1206. doi: 10.3390/app9061206
[66]	王玮东, 楚春双, 张丹扬, 等. 俄歇复合、电子泄漏和空穴注入对深紫外发光二极管效率衰退的影响[J]. 发光学报,2021,42(7):897-903. doi: 10.37188/CJL.20210102 WANG W D, CHU CH SH, ZHANG D Y, et al. Impact of auger recombination, electron leakage and hole injection on efficiency droop for DUV LEDs[J]. Chinese Journal of Luminescence, 2021, 42(7): 897-903. (in Chinese) doi: 10.37188/CJL.20210102
[67]	JIA X T, ZHOU Y G, LIU B, et al. A simulation study on the enhancement of the efficiency of GaN-based blue light-emitting diodes at low current density for micro-LED applications[J]. Materials Research Express, 2019, 6(10): 105915. doi: 10.1088/2053-1591/ab3f7b
[68]	HERRNSDORF J, MCKENDRY J J D, ZHANG SH L, et al. Active-matrix GaN micro light-emitting diode display with unprecedented brightness[J]. IEEE Transactions on Electron Devices, 2015, 62(6): 1918-1925. doi: 10.1109/TED.2015.2416915
[69]	CHANG L, YEH Y W, HANG SH, et al. Alternative strategy to reduce surface recombination for InGaN/GaN micro-light-emitting diodes-thinning the quantum barriers to manage the current spreading[J]. Nanoscale Research Letters, 2020, 15(1): 160. doi: 10.1186/s11671-020-03372-3
[70]	LIU SH G, HAN S C, XU CH CH, et al. Enhanced photoelectric performance of GaN-based micro-LEDs by ion implantation[J]. Optical Materials, 2021, 121: 111579. doi: 10.1016/j.optmat.2021.111579
[71]	CORFDIR P, LEWIS R B, MARQUARDT O, et al. Exciton recombination at crystal-phase quantum rings in GaAs/In_xGa_{1− x}As core/multishell nanowires[J]. Applied Physics Letters, 2016, 109(8): 082107. doi: 10.1063/1.4961245
[72]	YANG Y, CAO X A. Removing Plasma-induced sidewall damage in GaN-based light-emitting diodes by annealing and wet chemical treatments[J]. Journal of Vacuum Science & Technology B, 2009, 27(6): 2337-2341.
[73]	CAO X A, CHO H, PEARTON S J, et al. Depth and thermal stability of dry etch damage in GaN schottky diodes[J]. Applied Physics Letters, 1999, 75(2): 232-234. doi: 10.1063/1.124332
[74]	JUNG B O, LEE W, KIM J, et al. Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process[J]. Scientific Reports, 2021, 11(1): 4535. doi: 10.1038/s41598-021-83933-3
[75]	WONG M S, NAKAMURA S, DENBAARS S P. Review-progress in high performance III-nitride micro-light-emitting diodes[J]. ECS Journal of Solid State Science and Technology, 2019, 9(1): 015012.
[76]	YANG C M, KIM D S, LEE S G, et al. Improvement in electrical and optical performances of GaN-based LED with SiO₂/Al₂O₃ double dielectric stack layer[J]. IEEE Electron Device Letters, 2012, 33(4): 564-566. doi: 10.1109/LED.2012.2185675
[77]	YANG C M, KIM D S, PARK Y S, et al. Enhancement in light extraction efficiency of GaN-based light-emitting diodes using double dielectric surface passivation[J]. Optics and Photonics Journal, 2012, 2(3): 185-192. doi: 10.4236/opj.2012.23028
[78]	LEY R T, SMITH J M, WONG M S, et al. Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation[J]. Applied Physics Letters, 2020, 116(25): 251104. doi: 10.1063/5.0011651
[79]	SON K S, CHOI D L, LEE H N, et al. The interfacial reaction between ITO and silicon nitride deposited by PECVD in fringe field switching device[J]. Current Applied Physics, 2002, 2(3): 229-232. doi: 10.1016/S1567-1739(02)00092-5
[80]	GUENTHER G, SCHIERNING G, THEISSMANN R, et al. Formation of metallic indium-tin phase from indium-tin-oxide nanoparticles under reducing conditions and its influence on the electrical properties[J]. Journal of Applied Physics, 2008, 104(3): 034501. doi: 10.1063/1.2958323
[81]	HUANG S W, SHEN C C, WU T ZH, et al. Full-color monolithic hybrid quantum dot nanoring micro light-emitting diodes with improved efficiency using atomic layer deposition and nonradiative resonant energy transfer[J]. Photonics Research, 2019, 7(4): 416-422. doi: 10.1364/PRJ.7.000416
[82]	KUANG H, TAN D Q, HE W, et al. Oxidation behavior of multilayer hard coatings (TiCN/Al₂O₃/TiN) in process of recycling coated multicomponent hardmetal scrap[J]. Materials, 2018, 11(10): 1796. doi: 10.3390/ma11101796
[83]	KUANG H, TAN D Q, HE W, et al. Mechanism of multi-layer composite coatings in the zinc process of recycling coated WC-Co cemented-carbide scrap[J]. Materiali in Tehnologije, 2017, 51(6): 997-1003. doi: 10.17222/mit.2017.049
[84]	WONG M S, LEE C, MYERS D J, et al. Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation[J]. Applied Physics Express, 2019, 12(9): 097004. doi: 10.7567/1882-0786/ab3949
[85]	王伟, 赵甜甜, 刘强, 等. Mini/Micro LED巨量转移技术研究与发展现状[J]. 光学精密工程,2023,31(2):183-199. doi: 10.37188/OPE.20233102.0183 WANG W, ZHAO T T, LIU Q, et al. Research and development status of Mini/Micro LED mass transfer technology[J]. Optics and Precision Engineering, 2023, 31(2): 183-199. (in Chinese) doi: 10.37188/OPE.20233102.0183