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摘要:
本文报道了一种基于双有源区的4.7 μm中波红外量子级联激光器，脊宽为9.5 μm，可实现室温连续基横模工作。通过在单有源区中心插入0.8 μm InP间隔层，将原有的单有源区转变成双有源区结构，可显著降低器件有源区的峰值温度，同时抑制高阶横模的产生。在288 K温度下，腔长为5 mm的双有源区器件的阈值电流密度为1.14 kA/cm2，连续输出功率为0.71 W，快轴发散角为27.3°，慢轴发散角为18.1°。同采用常规单有源区结构器件相比，采用双有源区结构的器件，其最大光输出功率未出现退化，同时器件慢轴方向由多模变化为基横模，光束质量得到了显著改善。本工作为改善高功率中波量子级联激光器的慢轴光束质量提供了一种解决思路。
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关键词:
- 中红外 /
- 量子级联激光器 /
- 双有源区 /
- 金属有机物化学气相沉积 /
- 连续输出
Abstract:This paper reports a 4.7-μm mid-wave infrared quantum cascade laser based on double active region structure with a ridge width of 9.5 μm, which can achieve continuous single transverse mode operation at room temperature. By inserting 0.8-μm InP, the original single active region is transformed into a double active region structure, which can significantly reduce the peak temperature of the device's active region and suppress the generation of higher-order transverse modes. At a temperature of 288 K, the device with a double active region structure with a cavity length of 5 mm has a threshold current density of 1.14 kA/cm2, a continuous output power of 0.706 W, a fast axis divergence angle of 27.3°, and a slow axis divergence angle of 18.1°. Compared with conventional devices with a single active region structure, the devices with a double active region structure have no degradation in their maximum optical output power and show a significant improvement in the beam quality in the slow axis direction of the device. These results provide a solution to the problem of the slow axis beam quality of high-power mid-wave quantum cascade lasers.
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Key words:
- mid-infrared /
- quantum cascade laser /
- double active region /
- MOCVD /
- continuous-wave output
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图 1 (a)有限元仿真结构示意图；(b) 在有源区插入不同厚度InP的横向模态的相对品质因子图
Figure 1. (a) Schematic diagram of the finite element simulation structure; (b) relative figure of merit for transverse modes when inserting different InP thicknesses in active region
图 2 (a)单有源区器件及(b)双有源区器件热学仿真结果
Figure 2. Thermal simulation results of (a) single active region device and (b) double active region device
图 3 Sample 1和Sample 2的(a)X射线双晶衍射及其(b)放大图
Figure 3. (a) X-ray double diffraction and their (b) enlarged images of Sample 1 and Sample 2
图 4 (a) Device 1和(c) Device 2的结构示意图；(b) Device 1和(d) Device 2前腔面在电镜下的横截面图
Figure 4. Schematic diagram of (a) Device 1 and (c) Device 2; cross-sectional SEM images of the front cavity of (b) Device 1 and (d) Device 2
图 5 (a) Device 1和Device 2在连续模式下的PIV曲线；(b) Device 1和Device 2在阈值电流下的光谱
Figure 5. (a) PIV curves of Device 1 and Device 2 in continuous wave; (b) spectra of Device 1 and Device 2 at threshold current
图 6 Device 1和Device 2在(a)慢轴方向及(b)快轴方向的远场
Figure 6. Far fields of Device 1 and Device 2 in the (a) slow axis direction and (b) fast axis directions
表 1 不同材料不同掺杂浓度的有效折射率[25]
Table 1. Effective refractive indexes of different materials with different doping conditions
Materials Doping density Refractive index InP substrate 2×1017 3.084+2.00000E-4i InP 2×1016 3.091+2.00000E-5i InGaAs 2×1016 3.393+7.88405E-5i Active 2×1017 3.245+4.01336E-5i InP 2×1017 3.084+2.00000E-4i InP 1×1017 3.088+1.00000E-4i InP 5×1018 2.893+5.00000E-3i InP 2×1019 2.188+2.70000E-2i Au / 3.319+1.84110E+1i Si3N4 / 1.358+6.50000E-4i Fe:InP / 3.099+6.34895E-8i 
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