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摘要:
本文报道了一种基于双有源区的4.7 μm中波红外量子级联激光器，脊宽为9.5 μm，可实现室温连续基横模工作。通过在单有源区中心插入0.8 μm InP间隔层，将原有的单有源区转变成双有源区结构，可显著降低器件有源区的峰值温度，同时抑制高阶横模的产生。在288 K温度下，腔长为5 mm的双有源区器件阈值电流密度为1.14 kA/cm2，连续输出功率为0.71 W，快轴发散角为27.3°，慢轴发散角为18.1°。同常规单有源区结构器件相比，采用双有源区结构的器件，其最大光输出功率未出现退化，同时器件慢轴方向由多模变化为基横模，光束质量得到了显著改善。本工作为改善高功率中波量子级联激光器的慢轴光束质量提供了一种解决思路。
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关键词:
- 中红外 /
- 量子级联激光器 /
- 双有源区 /
- 金属有机物化学气相沉积 /
- 连续输出
Abstract:This paper reports a 4.7-μm mid-wave infrared quantum cascade laser based on double active regions, with a ridge width of 9.5 μm. It can achieve continuous single transverse mode operation at room temperature. By inserting 0.8-μm InP, the original single active region is transformed into a double active region structure, which can significantly reduce the peak temperature of the device's active region and suppress the generation of higher-order transverse modes. At a temperature of 288 K, the device with a double active region structure with a cavity length of 5 mm has a threshold current density of 1.14 kA/cm2, a continuous output power of 0.706 W, a fast axis divergence angle of 27.3°, and a slow axis divergence angle of 18.1°. The devices with a double active region structure have no degradation in their maximum optical output power and show a significant improvement in the beam quality in the slow axis direction of the device when compared with conventional devices with a single active region structure. These results provide a solution to the problem of the slow axis beam quality of high-power medium wave quantum cascade lasers.
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Key words:
- mid-infrared /
- quantum cascade laser /
- double active region /
- MOCVD /
- continuous-wave output
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图 1 (a)有限元仿真结构示意图；(b) 在有源区插入不同InP厚度的横向模态的相对品质因子图
Figure 1. (a) Schematic diagram of the finite element simulation structure; (b) relative figure of merit for transverse modes when inserting different InP thicknesses in active region
图 2 (a)单有源区器件及(b)双有源区器件热学仿真结果
Figure 2. Thermal simulation results of (a) single active region device and (b) double active region device.
图 3 Sample 1和Sample 2的(a)X射线双晶衍射及其(b)放大图
Figure 3. (a) X-ray double diffraction and their (b) enlarged images of Sample 1 and Sample 2
图 4 (a) Device 1和Device 2的结构示意图；(b) Device 1和(d) Device 2前腔面在电镜下的横截面图
Figure 4. Schematic diagram of (a) Device 1 and Device 2; cross-sectional SEM images of the front cavity of (b) Device 1 and (d) Device 2
图 5 (a) Device 1和Device 2在连续模式下的PIV曲线；(b) Device 1和Device 2在阈值电流下的光谱
Figure 5. (a) PIV curves of Device 1 and Device 2 in continuous wave; (b) spectra of Device 1and Device 2 at Threshold Current
图 6 Device 1和Device 2在(a)慢轴方向及(b)快轴方向的远场
Figure 6. Far fields of Device 1 and Device 2 in the (a) slow axis direction and (b) fast axis directions
表 1 不同材料不同掺杂浓度的有效折射率[25]
Table 1. Effective refractive indexes of different materials different doping conditions
Materials doping density Refractive index InP substrate 2×1017 3.084+2.00000E-4i InP 2×1016 3.091+2.00000E-5i InGaAs 2×1016 3.393+7.88405E-5i Active 2×1017 3.245+4.01336E-5i InP 2×1017 3.084+2.00000E-4i InP 1×1017 3.088+1.00000E-4i InP 5×1018 2.893+5.00000E-3i InP 2×1019 2.188+2.70000E-2i Au / 3.319+1.84110E+1i Si3N4 / 1.358+6.50000E-4i Fe:InP / 3.099+6.34895E-8i 
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[1] FAIST J, CAPASSO F, SIVCO D L, et al. Quantum cascade laser[J]. Science, 1994, 264(5158): 553-556. doi: 10.1126/science.264.5158.553 [2] 赵越, 张锦川, 刘传威, 等. 中远红外量子级联激光器研究进展(特邀)[J]. 红外与激光工程,2018,47(10):1003001. doi: 10.3788/IRLA201847.1003001ZHAO Y, ZHANG J CH, LIU CH W, et al. Progress in mid-and far-infrared quantum cascade laser (invited)[J]. Infrared and Laser Engineering, 2018, 47(10): 1003001. (in Chinese). doi: 10.3788/IRLA201847.1003001 [3] DELY H, BONAZZI T, SPITZ O, et al. 10 Gbit s−1 free space data transmission at 9 µm wavelength with unipolar quantum optoelectronics[J]. Laser & Photonics Reviews, 2022, 16(2): 2100414. [4] SPITZ O, DIDIER P, DURUPT L, et al. Free-space communication with directly modulated mid-infrared quantum cascade devices[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2022, 28(1): 1200109. [5] 温志渝, 王玲芳, 陈刚. 基于量子级联激光器的气体检测系统的发展与应用[J]. 光谱学与光谱分析,2010,30(8):2043-2048. doi: 10.3964/j.issn.1000-0593(2010)08-2043-06WEN ZH Y, WANG L F, CHEN G. Development and application of quantum cascade laser based gas sensing system[J]. Spectroscopy and Spectral Analysis, 2010, 30(8): 2043-2048. (in Chinese). doi: 10.3964/j.issn.1000-0593(2010)08-2043-06 [6] FATHOLOLOUMI S, DUPONT E, CHAN C W I, et al. Terahertz quantum cascade lasers operating up to ~200 K with optimized oscillator strength and improved injection tunneling[J]. Optics Express, 2012, 20(4): 3866-3876. doi: 10.1364/OE.20.003866 [7] LI L H, CHEN L, ZHU J X, et al. Terahertz quantum cascade lasers with> 1 W output powers[J]. Electronics Letters, 2014, 50(4): 309-311. doi: 10.1049/el.2013.4035 [8] VITIELLO M S, SCALARI G, WILLIAMS B, et al. Quantum cascade lasers: 20 years of challenges[J]. Optics Express, 2015, 23(4): 5167-5182. doi: 10.1364/OE.23.005167 [9] BECK M, HOFSTETTER D, AELLEN T, et al. Continuous wave operation of a mid-infrared semiconductor laser at room temperature[J]. Science, 2002, 295(5553): 301-305. doi: 10.1126/science.1066408 [10] LYAKH A, MAULINI R, TSEKOUN A, et al. 3 W continuous-wave room temperature single-facet emission from quantum cascade lasers based on nonresonant extraction design approach[J]. Applied Physics Letters, 2009, 95(14): 141113. doi: 10.1063/1.3238263 [11] BAI Y B. High wall plug efficiency quantum cascade lasers[D]. Xi’an: Northwestern University, 2011. [12] BAI Y, BANDYOPADHYAY N, TSAO S, et al. Highly temperature insensitive quantum cascade lasers[J]. Applied Physics Letter, 2010, 97(25): 251104. doi: 10.1063/1.3529449 [13] WANG F, SLIVKEN S, WU D H, et al. Continuous wave quantum cascade lasers with 5.6 W output power at room temperature and 41% wall-plug efficiency in cryogenic operation[J]. AIP Advances, 2020, 10(5): 055120. doi: 10.1063/5.0003318 [14] NIU SH, YANG P CH, HUANG R X, et al. High power, broad tuning quantum cascade laser at λ ~8.9 µm[J]. Optics Express, 2023, 31(25): 41252-41258. doi: 10.1364/OE.505349 [15] WANG C A, HUANG R K, GOYAL A, et al. OMVPE growth of highly strain-balanced GaInAs/AlInAs/InP for quantum cascade lasers[J]. Journal of Crystal Growth, 2008, 310(23): 5191-5197. doi: 10.1016/j.jcrysgro.2008.07.100 [16] ROBERTS J S, GREEN R P, WILSON L R, et al. Quantum cascade lasers grown by metalorganic vapor phase epitaxy[J]. Applied Physics Letters, 2003, 82(24): 4221-4223. doi: 10.1063/1.1583858 [17] BOTEZ D, KIRCH J D, BOYLE C, et al. High-efficiency, high-power mid-infrared quantum cascade lasers [Invited][J]. Optical Materials Express, 2018, 8(5): 1378-1398. doi: 10.1364/OME.8.001378 [18] FEI T, ZHAI SH Q, ZHANG J CH, et al. 3 W continuous-wave room temperature quantum cascade laser grown by metal-organic chemical vapor deposition[J]. Photonics, 2023, 10(1): 47. doi: 10.3390/photonics10010047 [19] FEI T, ZHAI SH Q, ZHANG J CH, et al. High power λ~ 8.5 μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K[J]. Journal of Semiconductors, 2021, 42(11): 112301. doi: 10.1088/1674-4926/42/11/112301 [20] SUN Y Q, YIN R, ZHANG J CH, et al. High-performance quantum cascade lasers at λ ~9 µm grown by MOCVD[J]. Optics Express, 2022, 30(21): 37272-37280. doi: 10.1364/OE.469573 [21] 庞磊, 程洋, 赵武, 等. 基于MOCVD生长的4.6 μm中红外量子级联激光器[J]. 红外与激光工程,2022,51(6):20210980. doi: 10.3788/IRLA20210980PANG L, CHENG Y, ZHAO W, et al. Mid-infrared quantum cascade laser grown by MOCVD at 4.6 µm[J]. Infrared and Laser Engineering, 2022, 51(6): 20210980. (in Chinese). doi: 10.3788/IRLA20210980 [22] 孙永强, 费腾, 黎昆, 等. MOCVD生长的瓦级中波红外高功率量子级联激光器[J]. 光学学报,2022,42(22):2214002. doi: 10.3788/AOS202242.2214002SUN Y Q, FEI T, LI K, et al. MOCVD-based mid-wave infrared quantum cascade lasers with watt-level power[J]. Acta Optica Sinica, 2022, 42(22): 2214002. (in Chinese). doi: 10.3788/AOS202242.2214002 [23] SUTTINGER M, GO R, AZIM A, et al. High brightness operation in broad area quantum cascade lasers with reduced number of stages[C]. Proceedings of 2019 Conference on Lasers and Electro-Optics, IEEE, 2019: 1-2. [24] BISMUTO A, GRESCH T, BÄCHLE A, et al. Large cavity quantum cascade lasers with InP interstacks[J]. Applied Physics Letters, 2008, 93(23): 231104. doi: 10.1063/1.3042213 [25] RYU J H, KIRCH J D, KNIPFER B, et al. Beam stability of buried-heterostructure quantum cascade lasers employing HVPE regrowth[J]. Optics Express, 2021, 29(2): 2819-2826. doi: 10.1364/OE.414489 [26] XIE F, CANEAU C, LEBLANC H P, et al. Room temperature CW operation of short wavelength quantum cascade lasers made of strain balanced Ga xIn1- xAs/Al yIn1- y as material on InP substrates[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17(5): 1445-1452. doi: 10.1109/JSTQE.2011.2136325 [27] YU N F, DIEHL L, CUBUKCU E, et al. Near-field imaging of quantum cascade laser transverse modes[J]. Optics Express, 2007, 15(20): 13227-13235. doi: 10.1364/OE.15.013227 [28] LEE H K, YU J S. Thermal effects in quantum cascade lasers at λ ~4.6 μm under pulsed and continuous-wave modes[J]. Applied Physics B, 2012, 106(3): 619-627. -
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