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摘要:
CMOS图像传感器是当今应用最广泛的传感器之一，已应用在航空航天，医学成像，工业检测，军事侦察等领域。然而，CMOS图像传感器的激光干扰和损伤随之也成为国内外相关领域的研究热点。为了研究脉冲激光对背照式CMOS图像传感器的影响，本文选用Sony IMX178背照式CMOS图像传感器作为靶材，基于热传导方程，利用有限元仿真软件COMSOL Multiphysics对比计算了不同参数单脉冲激光辐照下CMOS图像传感器的温度分布。计算结果表明，传感器在532 nm (1 ns)、
1064 nm (1 ns)、532 nm (30 ps)、1064 nm (30 ps)单脉冲激光作用下的点损伤阈值分别为61.12 mJ/cm2、75.76 mJ/cm2、31.83 mJ/cm2、37.43 mJ/cm2。同步开展了背照式CMOS图像传感器的激光辐照效应实验研究。结果表明：相比于1064 nm脉冲激光，532 nm脉冲激光作用下的图像传感器损伤阈值更低；相比于纳秒脉冲激光，皮秒脉冲激光有更高的峰值功率，更容易造成点损伤。本文仿真计算得到的点损伤阈值和实验结果比较吻合。Abstract:The CMOS image sensor is widely used in aerospace, medical imaging, industrial detection, military reconnaissance, and other fields. The laser interference and damage to CMOS image sensors have also become a research hotspot in related fields at home and abroad. To investigate the impact of pulsed laser on back-illuminated CMOS image sensors, we select the Sony IMX178 back-illuminated CMOS image sensor as the target. Based on the heat conduction equation, the finite element simulation software COMSOL Multiphysics is used to compare and calculate the temperature distribution of the CMOS image sensor under the irradiation of single-pulse lasers with different parameters. The calculation results indicate that the point damage thresholds of the sensor under the effects of single-pulse lasers at 532 nm (1 ns), 1064 nm (1 ns), 532 nm (30 ps), and 1064 nm (30 ps) are respectively 61.12 mJ/cm2, 75.76 mJ/cm2, 31.83 mJ/cm2, and 37.43 mJ/cm2. Subsequently, an experimental study is conducted on the laser irradiation effects of back-illuminated CMOS image sensors. The experimental results demonstrate that the image sensor exhibits a lower damage threshold under the influence of 532 nm pulsed lasers compared to 1064 nm pulsed lasers; picosecond pulsed lasers, with higher peak power compared to nanosecond pulsed lasers, are more prone to causing point damage. The calculated point damage thresholds are highly consistent with the experimental results.
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Key words:
- nanosecond pulse laser /
- picosecond pulse laser /
- thermal effect /
- damage threshold
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图 1 背照式CMOS图像传感器二维结构
Figure 1. The two-dimensional structure of the back-illuminated CMOS image sensor
图 2 532 nm纳秒单脉冲激光辐照结果。(a)温度分布；(b)各层最大温度变化
Figure 2. Radiation results of 532 nm nanosecond single pulse laser. (a) Temperature distribution; (b) maximum temperature change in each layer
图 3
1064 nm纳秒单脉冲激光辐照结果。(a)温度分布；(b)各层最大温度变化Figure 3. Radiation results of
1064 nm nanosecond single pulse laser. (a) Temperature distribution; (b) maximum temperature change in each layer
图 4 532 nm皮秒单脉冲激光辐照结果。(a)温度分布；(b)各层最大温度变化
Figure 4. Radiation results of 532 nm picosecond single pulse laser. (a) Temperature distribution; (b) maximum temperature change in each layer
图 5
1064 nm皮秒单脉冲激光辐照结果。(a)温度分布；(b)各层最大温度变化Figure 5. Radiation results of
1064 nm picosecond single pulse laser. (a) Temperature distribution; (b) maximum temperature change in each layer
图 6 532 nm纳秒单脉冲激光辐照CMOS图像传感器实验框图
Figure 6. Experimental block of CMOS image sensor irradiated with 532 nm nanosecond single pulse laser
图 7 532 nm纳秒单脉冲激光辐照CMOS图像传感器实验光路
Figure 7. Light path of CMOS image sensors irradiated by 532 nm nanosecond single pulse laser
图 8 532 nm 纳秒激光辐照时，CMOS图像传感器的损伤情况，从左到右激光能量密度分别为28.95 mJ/cm2、69.91 mJ/cm2、167.6 mJ/cm2和519.3 mJ/cm2
Figure 8. Damage condition of CMOS image sensors irradiated by 532 nm nanosecond single pulse laser. From left to right, the laser energy densities are 28.95 mJ/cm2, 69.91 mJ/cm2, 167.6 mJ/cm2, 519.3 mJ/cm2, respectively
图 9
1064 nm纳秒单脉冲激光辐照CMOS图像传感器实验原理Figure 9. Experimental principle of CMOS image sensor irradiated with
1064 nm nanosecond single pulse laser
图 10
1064 nm单脉冲激光辐照CMOS图像传感器实验光路Figure 10. Light path of CMOS image sensor irradiated with
1064 nm nanosecondsingle pulse laser
图 11
1064 nm纳秒单脉冲激光辐照CMOS传感器时的激光损伤情况，从左到右的激光能量密度分别为40.79 mJ/cm2，100.6 mJ/cm2，132.4 mJ/cm2和1.24 J/cm2Figure 11. Damage condition of CMOS image sensors irradiated by
1064 nm nanosecond single pulse laser. From left to right, the laser energy densities are 40.79 mJ/cm2, 100.6 mJ/cm2, 132.4 mJ/cm2, 1.24 J/cm2, respectively
图 12 皮秒单脉冲激光辐照CMOS图像传感器实验原理
Figure 12. Experimental principle of CMOS image sensor irradiated with picosecond single pulse laser
图 13 皮秒单脉冲激光辐照CMOS图像传感器实验光路
Figure 13. Light path of CMOS image sensor irradiated with single pulse picosecond laser
图 14 532 nm皮秒激光作用下的CMOS图像传感器的损伤情形。从左到右的激光能量密度分别为18.95 mJ/cm2，78.93 mJ/cm2，120.49 mJ/cm2和501.33 mJ/cm2
Figure 14. Damage condition of CMOS image sensor irradiated by 532 nm picosecond pulse laser. From left to right, the laser energy densities are 18.95 mJ/cm2, 78.93 mJ/cm2, 120.49 mJ/cm2, 501.33 mJ/cm2, respectively
图 15
1064 nm 皮秒单脉冲激光作用下的CMOS图像传感器的损伤情形。从左到右的激光能量密度分别为19.71 mJ/cm2，90.76 mJ/cm2，123.80 mJ/cm2，566.19 mJ/cm2Figure 15. Damage condition of CMOS image sensor irradicatd by
1064 nm picosecond pulse laser. From left to right, the laser energy densities are 19.71 mJ/cm2, 90.76 mJ/cm2, 123.80 mJ/cm2, 566.19 mJ/cm2, respectirely
图 16 点损伤阈值仿真和实验结果对比
Figure 16. Comparison between simulation results and experimental results of point damage threshold
表 1 材料的热力学参数
Table 1. Thermodynamic parameters of materials
PI Si Al 密度/(kg·m−3) 1190 2329 2700 导热系数/(W·m−1K−1) 0.3 27 238 热膨胀系数(1/K) 2×10−5 2.6×10−6 23×10−6 恒压热容/(J·kg−1·K−2) 1510 700 900 杨氏模量(Pa) 3.2×109 170×109 70×109 泊松比 0.35 0.28 0.33 熔点(K) 710 1685 932 
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表 2 各激光参数下的点损伤阈值
Table 2. Point damage thresholds under various laser parameters
单脉冲激光 点损伤阈值/（mJ·cm−2） 532 nm，1 ns 61.12 1064 nm，1 ns75.76 532 nm，30 ps 31.83 1064 nm，30 ps37.43
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表 3 各阶段损伤阈值
Table 3. Damage thresholds for each stage
点损伤 线损伤 功能性损伤 致盲 纳秒 532 nm 28.95 69.91 167.6 519.3 1064 nm40.79 100.6 132.4 1.24×103 皮秒 532 nm 18.95 78.93 120.49 501.33 1064 nm19.71 90.76 123.80 566.19 注：激光能量密度单位为mJ/cm2
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