Investigation of laser-induced damage mechanisms in back-illuminated cmos detector modules under nanosecond pulsed irradiation
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摘要:
为了模拟真实工作场景下激光对可见光成像系统损伤效应，将滤光片和背照式CMOS探测器共同构成探测器组件作为靶材，探讨两种不同波长的纳秒脉冲激光对探测器组件的损伤效应。首先，通过实验的方式获得532 nm及
1064 nm纳秒脉冲激光对CMOS组件的典型损伤效应数据。然后，利用有限元仿真方法建立激光与探测器相互作用的模型，以解决实验中无法实时观测探测器内部的温度与应力变化和分布的问题，在获得损伤效应数据的同时将传统实验难以观察的温度/应力集中现象“可视化”，提供可靠的参考阈值数据。通过仿真及实验研究表明损伤机理为热-力联合损伤，并得了如下的损伤阈值，532 nm波段下各阶段损伤阈值为30.06 mJ/cm2、38.93 mJ/cm2、56.20 mJ/cm2和102.17 mJ/cm2，1064 nm波段下为38.62 mJ/cm2、50.09 mJ/cm2、116.31 mJ/cm2和137.73 mJ/cm2。-
关键词:
- 背照式COMS探测器 /
- 纳秒脉冲激光 /
- 激光辐照效应 /
- 损伤机理
Abstract:To evaluate the laser-induced damage effects on visible-light imaging systems under realistic operational conditions, a detector module comprising a filter and a back-illuminated CMOS sensor was employed as the target. This study investigates the damage mechanisms induced by nanosecond pulsed lasers at wavelengths of 532 nm and
1064 nm. Initially, a series of experiments were conducted to characterize the typical damage behaviors resulting from laser irradiation. To address the limitations in observing internal thermal and mechanical responses during the experiments, a finite element simulation model was developed to analyze the interaction between the laser and the detector. The simulation enabled visualization of temperature and stress concentration phenomena that are difficult to capture through direct observation, thus providing valuable reference data for damage thresholds. The results from both the experiments and simulations indicate that the dominant damage mechanism is coupled thermo-mechanical failure. The measured multi-stage damage thresholds were 30.06 mJ/cm2, 38.93 mJ/cm2, 56.20 mJ/cm2, and 102.17 mJ/cm2 for 532 nm laser irradiation, and 38.62 mJ/cm2, 50.09 mJ/cm2, 116.31 mJ/cm2, and 137.73 mJ/cm2 for1064 nm irradiation. -
图 1 CMOS探测器基本结构示意图
Figure 1. Schematic Diagram of the Basic Structure of a CMOS Detector
图 2 脉冲激光辐照探测器组件实验原理
Figure 2. Principle of pulsed laser irradiation experiments on detector assemblies
图 4 滤光片光谱曲线 (a) 为前膜和后膜各自光谱曲线， (b) 为前膜和后膜组合光谱曲线
Figure 4. Spectral curve of the filter (a) spectral curves of front and rear films, (b) spectral curve of front film and rear film combination）
图 5 532 nm纳秒激光辐照后，不同损伤程度的探测器接收图像和芯片损伤形貌
Figure 5. Detector images and chip damage morphology at different damage levels after 532 nm nanosecond laser irradiation
图 6
1064 nm纳秒激光辐照后，不同损伤程度的探测器接收图像和芯片损伤形貌Figure 6. Detector images and chip damage morphology at different damage levels after
1064 nm nanosecond laser irradiation
图 7 探测器组件损伤实验得到的滤光片损伤形貌
Figure 7. Damage morphology of the filter obtained from the detector component damage experiment
图 8 背照式CMOS探测器二维简化示意图
Figure 8. Simplified two-dimensional schematic of a back-illuminated CMOS detector
图 9 532 nm纳秒脉冲激光损伤CMOS探测器仿真结果。(a) 最高温度分布图；(b) 最高温度等温线图；(c) 各层最高温度曲线
Figure 9. Simulation results of CMOS detector damage by 532 nm nanosecond pulse laser. (a) Maximum temperature distribution; (b) Isothermal map of maximum temperature; (c) Maximum temperature curves for each layer
图 10 532 nm激光损伤CMOS探测器应力应变仿真结果。(a)最高应力分布图；(b)最高位移分布图；(c)各层最高应力曲线
Figure 10. Stress-strain simulation results of CMOS detector damage by 532 nm laser. (a) Maximum stress distribution; (b) Maximum displacement distribution; (c) Maximum stress curves for each layer
图 12
1064 nm纳秒脉冲激光损伤CMOS探测器仿真结果。(a) 最高温度分布图；(b) 最高温度等温线图；(c) 各层最高温度曲线Figure 12. Simulation results of CMOS detector damage by
1064 nm nanosecond pulse laser. (a) Maximum temperature distribution; (b) Isothermal map of maximum temperature; (c) Maximum temperature curves for each layer
图 13
1064 nm激光损伤CMOS探测器应力应变仿真结果。(a) 最高应力分布图；(b) 最高位移分布图；(c) 各层最高应力曲线Figure 13. Stress-strain simulation results of CMOS detector damage by
1064 nm laser. (a) Maximum stress distribution; (b) Maximum displacement distribution; (c) Maximum stress curves for each layer表 1 激光对光电载荷探测器组件的损伤实验主要设备
Table 1. Main Experimental Equipment for Laser-Induced Damage Testing on Electro-Optical Payload Detector Assemblies
设备名称 设备型号 设备参数 激光器 Nimma-900 单脉冲<900 mJ 波长532/ 1064 nm
脉宽9 ns能量计 Ophir PD-10 测量范围1 nJ~13 μJ Ophir PE-50 测量范围10 μJ~10 J 格兰棱镜
L2大恒GCL-070210 工作波长350− 2500 nm；通光孔径
10 mm；消光比105∶1半波片L1 大恒GCL-060512 工作波长532 nm；透过率T>98% 大恒GCL-060517 工作波长1064nm；透过率T>98% 扩束器 自研定制 工作波长532 nm 扩束倍数4× LBTEK BEF03-B 工作波段650~ 1100 nm 扩束倍数3×
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表 2 海康威视MV-CA060-11GM基本参数
Table 2. Basic specifications of the Hikvision MV-CA060-11GM
参数 海康威视MV-CA060-11GM 传感器类型 CMOS，卷帘快门 传感器型号 Sony IMX178 像元尺寸 2.4 μm × 2.4 μm 最大帧率 17 fps 分辨率 3072 ×2048增益 0 dB~20 dB 曝光时间 27 μs~2.5 sec
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表 3 海康威视MV-CA060-11GM基本参数
Table 3. Basic specifications of the Hikvision MV-CA060-11GM
PI Si Al 恒压热容 J/(kg·K) 1510 700 900 密度 kg/m³ 1190 2329 2700 导热系数 W/(m·K) 0.3 130 238 杨氏模量 Pa 3.2×109 1.7×1011 7×1010 泊松比 0.35 0.28 0.33 热膨胀系数 1/K 2×10−5 2.6×10−6 2.3×10−5
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表 4 CMOS探测器实验与仿真损伤阈值（单位：mJ/cm2）
Table 4. Damage threshold of CMOS detector: experimental and simulation results (Dimension: mJ/cm2)
波长 实验点损伤阈值 仿真点损伤阈值 532 nm 30.06 52.79 1064 nm38.62 78.02
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