波导/势垒界面插入GaInP和GaAsP对InAlGaAs量子阱808 nm半导体激光器载流子泄漏的影响

付梦洁; 董海亮; 贾志刚; 贾伟; 梁建; 许并社

doi:10.37188/CO.EN-2024-0006

波导/势垒界面插入GaInP和GaAsP对InAlGaAs量子阱808 nm半导体激光器载流子泄漏的影响

付梦洁^1,,
董海亮^{1, 2, ,},
贾志刚¹,
贾伟^{1, 2},
梁建³,
许并社^{1, 2, 4, ,}

1.
太原理工大学新材料界面科学与工程教育部重点实验室, 山西太原030024
2.
山西浙大新材料与化工研究院, 山西太原030024
3.
太原理工大学材料科学与工程学院, 山西太原030024
4.
陕西科技大学原子与分子科学研究所, 陕西西安710021

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出版历程
- 收稿日期: 2024-02-27
- 录用日期: 2024-05-06
- 网络出版日期: 2024-05-17

Effect of GaInP and GaAsP inserted into waveguide/barrier interface on carrier leakage in InAlGaAs quantum well 808 nm laser diode

doi: 10.37188/CO.EN-2024-0006

FU Meng-jie^1
,,
DONG Hai-liang^{1, 2
, ,},
JIA Zhi-gang¹,
JIA Wei^{1, 2},
LIANG Jian³,
XU Bing-she^{1, 2, 4
, ,}

1.
Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, Shanxi
2.
Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030024, P. R. Shanxi
3.
College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, Shanxi
4.
Institute of Atomic and Molecular Science, Shaanxi University of Science & Technology, Xian 710021, Shaanxi

Funds: Supported by National Natural Science Foundation of China (No. 61904120, No. 21972103); Shanxi “1331 project” and the Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering (No. 2022SX-TD018, No. 2021SX-AT001, 002 and 003)

More Information

Author Bio:
FU Meng-jie (1996—), female, born in Shangqiu, Henan Province. She received her bachelor's degree from Henan University of Urban Construction in 2020, and is now a master's candidate in the School of Taiyuan University of Technology. She is mainly engaged in the research of design of epitaxial structure for 808 nm LD. E-mail: 2227240245@qq.com

DONG Hai-liang, M. S. Supervisor. Received his B. S. degree from Ludong University in 2008, M. S. degree from Taiyuan University of Technology in 2011, and Ph. D. degree from Taiyuan University of Technology in 2016; Since 2019, he has been working as a senior experiment in the Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology; His main research work is GaAs and GaN based semiconductor lasers, the Light-emitting device structure design, epitaxial material growth and performance characterization. E-mail: dhltyut@163.com

Mr. Xu Bingshe, Professor and Doctoral Supervisor, received his Bachelor's Degree from Taiyuan University of Technology in 1978, and his Doctoral Degree from the University of Tokyo in 1994. He has presided and currently is working on more than 50 national and provincial projects, such as the National Outstanding Young Scientist Fund, the National 973 Program, the International Science and Technology Cooperation Program of the Ministry of Science and Technology, the Major Research Program of the National Natural Science Foundation of China (Nano Special Project), the National Natural Science Foundation of China, and the Sino-Japanese International Cooperation Program of the National Natural Science Foundation of China, and so on. His research interests include nano and thin film functional materials and their devices. He has published more than 450 papers in Advanced Functional Materials, Angewandte Chemie, Acta Materialia, and other national and international journals. E-mail: xubs@tyut.edu.cn

Corresponding author: dhltyut@163.com; xubs@tyut.edu.cn

摘要

摘要:
传统半导体激光器由于载流子泄漏严重，在波导区域发生非辐射复合，进而降低了输出功率和电光转换效率。本文设计了一种新型外延结构，通过在有源区两侧势垒和波导层之间分别插入n-Ga_0.55In_0.45P和p-GaAs_0.6P_0.4材料，调控能带结构，增大阻挡载流子泄漏的势垒高度，抑制了载流子泄漏。研究结果表明，相较于传统结构器件，泄漏电流密度降低了87.71%。在25 °C注入电流密度5 A/cm²时，新型外延结构的非辐射复合电流密度降低至37.411 A/cm²，输出功率达12.80 W，电光转换效率达78.24%。此外，在5~65 °C温度变化范围内，中心波长的温漂系数为0.206 nm/ °C，阈值电流随温度变化的拟合直线的斜率为0.00113。设计结构为抑制载流子泄漏提供了理论依据。
- 808 nm半导体激光器 /
- Ga_0.55In_0.45P和GaAs_0.6P_0.4插入层 /
- InAlGaAs量子阱 /
- 载流子泄漏
Abstract:
There is nonradiative recombination in waveguide region owing to carrier leakage, which in turn reduces output power and wall-plug efficiency. In this paper, we designed a novel epitaxial structure, which suppresses carrier leakage by inserting n-Ga_0.55In_0.45P and p-GaAs_0.6P_0.4 between barriers and waveguide layers, respectively, to modulate the energy band structure and to increase the height of barriers. The results showed that leakage current density reduced by 87.71%, compared to traditional structure. The nonradiative recombination current density of novel structure reduced to 37.411 A/cm², and output power reached 12.80 W with wall-plug efficiency of 78.24% at an injection current density 5 A/cm² at room temperature. In addition, temperature drift coefficient of center wavelength was 0.206 nm/°C at the temperature range from 5 to 65 °C, and the slope of fitted straight line of threshold current with temperature variation was 0.00113. The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.
- 808 nm laser diode /
- Ga_0.55In_0.45P and GaAs_0.6P_0.4 insertion layers /
- InAlGaAs quantum well /
- carrier leakage

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Figure 1. Diagram of three LDs epitaxial structures

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Figure 2. Refractive index and TE mode optic field intensity distributions of three LDs (a), and magnified diagrams in the 1750-1900 nm range of LD1, LD2, and LD3 (b)

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Figure 3. Curves of quantum well external loss (α_Out) (a), quantum well internal loss (α_QW) (b), and total optical loss (α_Total) (c) of three LDs as a function of injection current

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Figure 4. The energy band comparison of the three structured LDs at an injection current of 10 A (a) and the magnification of LD1, LD2, and LD3 in the 1760-1860 nm range (b)

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Figure 5. Leakage current density (a), Auger recombination current density (b) and SRH recombination current density (c), and nonradiative recombination current density (d) of three LDs as a function of injection current

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Figure 6. Curves of threshold current (a), operating voltage (b), output power (c) and WPE (d) of three LDs as a function of injection current

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Figure 7. Fitted curves of wavelength (a), threshold current (b) of three LDs as a function of temperature

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Table 1. Parameters of 808 nm LD epitaxial structures

title	materials	thicknesses /nm	doping concentration /cm⁻³
p-Contact layer	GaAs	350	1×10¹⁹
p-Cladding layer	Al_0.55Ga_0.45As	1000	1×10¹⁹
p-Waveguide layer	Al_0.35-0.55Ga_0.65-0.45As	300	1×10¹⁷~1×10¹⁸
p-Insertion layer	Ga_0.55In_0.45P/GaAs_0.6P_0.4	8	1×10¹⁷
p-Barrier layer	Al_0.2Ga_0.8As	6	0
Quantum well	In_0.14Al_0.16Ga_0.7As	5	0
n-Barrier layer	Al_0.2Ga_0.8As	6	0
n-Insertion layer	Ga_0.55In_0.45P	8	1×10¹⁷
n-Waveguide layer	Al_0.35-0.55Ga_0.65-0.45As	600	1×10¹⁷~1×10¹⁸
n-Cladding layer	Al_0.55Ga_0.45As	1200	1×10¹⁹
n-Substrate	GaAs	2000	1×10¹⁹

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