基于渐变p型层的AlGaN紫外VCSEL外延结构设计和光电性能研究

文欣欣; 贾伟; 翟光美; 董海亮; 赵超; 李天保; 许并社

doi:10.37188/CO.EN-2024-0027

基于渐变p型层的AlGaN紫外VCSEL外延结构设计和光电性能研究

文欣欣^1,,
贾伟^{1, 2, ,},
翟光美¹,
董海亮¹,
赵超¹,
李天保¹,
许并社^{1, 2, 3}

1.
太原理工大学新材料界面科学与工程教育部重点实验室, 山西太原 030024
2.
山西浙大新材料与化工研究院, 山西太原 030001
3.
陕西科技大学原子与分子科学研究所, 陕西西安 710021

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中图分类号: TN248.4
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出版历程
- 收稿日期: 2024-08-28
- 录用日期: 2024-10-14
- 网络出版日期: 2024-10-22

Numerical simulations on the photoelectric performance of AlGaN-based ultraviolet VCSELs with a slope-shaped p-type layer

doi: 10.37188/CO.EN-2024-0027

1.
Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
2.
Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030001, China
3.
Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi’an, 710021, China

Funds: This work was supported by the Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering (No. 2021SX-AT002 and No. 2022SX-TD018); the Key R & D Projects in Shanxi Province (No. 202302150101012); and the National Natural Science Foundation of China (Nos. 61604104, No. 21972103, No. 61904120).

More Information

Author Bio:
WEN Xin-xin (1999—), M.Sc, Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education, Taiyuan University of Technology. Her research focuses on optoelectronic materials and devices. E-mail: wxx2583692024@163.com

JIA Wei (1983—), Ph.D., Senior Experimentalist, Master's Supervisor, Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education, Taiyuan University of Technology. His main research focuses on semiconductor optoelectronic materials and devices. E-mail: jiawei@tyut.edu.cn

Corresponding author: jiawei@tyut.edu.cn

摘要

摘要:
由于GaN基紫外VCSEL中的空穴注入层p型掺杂效率较低，导致多量子阱中不能实现有效空穴注入，这极大的降低了紫外VCSEL的光电性能。因此本文设计了一种基于AlGaN的UV VCSEL中使用渐变HIL和EBL结构。该结构能够提高空穴注入效率，使空穴注入层中的空穴浓度增加，也能够使电子阻挡层和空穴注入层界面处的空穴势垒高度降低，从而利于空穴注入。我们使用商用软件PICS3D构建了该结构，并对能带结构以及载流子浓度等进行了模拟和理论分析。通过空穴注入层Al组分渐变引入极化掺杂增加空穴浓度从而提高空穴注入效率。在此基础上电子阻挡层渐变消除了空穴注入层和电子阻挡层界面的空穴突变势垒，使价带更平滑。这提高了多量子阱中的受激辐射复合速率，增强了激光功率。因此，渐变的p型层设计可以提升紫外VCSEL的光电性能。
- 紫外VCSEL /
- AlGaN /
- 极化掺杂 /
- 电子阻挡层 /
- 空穴注入效率
Abstract:
Owing to the low p-type doping efficiency of GaN-based ultraviolet (UV) vertical-cavity surface-emitting laser (VCSEL) hole injection layers (HILs), effective hole injection in multi-quantum wells (MQW) is not achieved, significantly limiting the photoelectric performance of UV VCSELs. By improving hole injection efficiency, the hole concentration in the HIL is increased, and the hole barrier at the electron barrier layer (EBL)/HIL interface is decreased. This minimises the hindering effect of hole injection. In this study, we developed a slope-shaped HIL and an EBL structure in AlGaN-based UV VCSELs. A mathematical model of this structure was established using a commercial software, photonic integrated circuit simulator in three-dimension (PICS3D). We conducted simulations and theoretical analyses of the band structure and carrier concentration. Introducing polarisation doping through the Al composition gradient in the HIL enhanced the hole concentration, thereby improving the hole injection efficiency. Furthermore, modifying the EBL eliminated the abrupt potential barrier for holes at the HIL/EBL interface, smoothing the valence band. This improved the stimulated radiative recombination rate in the MQW, increasing the laser power. Therefore, the sloped p-type layer can enhance the optoelectronic performance of UV VCSELs.
- UV VCSEL /
- AlGaN /
- polarisation doping /
- EBL /
- hole injection efficiency
注释:
Conflicts of interest:

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Figure 1. Structure of GaN-based VCSELs

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Figure 2. I-V and L-I characteristic plots of GaN-based VCSELs at 20 mA

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Figure 3. (a) Radial hole concentrations in MQWs and (b) radial hole current densities for different structures at 20 mA

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Figure 4. (a) Radial electron concentration distributions of MQWs and (b) radial electron current density distributions in different structures at 20 mA

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Figure 5. Stimulated recombination rates in the active region for different structures at 20 mA

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Figure 6. Relationship between WPE and the injection current

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Figure 7. Energy band diagrams of the active region and p-type doping regions of structures A, B, C, and D at 20 mA

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