具有电场调控层的高速MUTC-PD设计

徐建波; 刘凯; 董晓雯; 段晓峰; 黄永清; 王琦; 任晓敏

doi:10.37188/CO.EN-2024-0030

具有电场调控层的高速MUTC-PD设计

徐建波^{1, 2},
刘凯^{1, 2, ,},
董晓雯^{1, 2},
段晓峰^{1, 2},
黄永清^{1, 2},
王琦^{1, 2},
任晓敏^{1, 2}

1.
北京邮电大学信息光子学与光通信全国重点实验室, 北京 100876
2.
北京邮电大学电子工程学院, 北京100876

详细信息

中图分类号: TN215
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- 被引次数: 0
出版历程
- 收稿日期: 2024-09-26
- 修回日期: 2024-11-05
- 录用日期: 2024-12-10
- 网络出版日期: 2025-01-03

Design of high-speed MUTC-PD with electric field regulation layer

doi: 10.37188/CO.EN-2024-0030

XU Jian-bo^{1, 2},
LIU Kai^{1, 2
, ,},
DONG Xiao-wen^{1, 2},
DUAN Xiao-feng^{1, 2},
HUANG Yong-qing^{1, 2},
WANG Qi^{1, 2},
REN Xiao-min^{1, 2}

1.
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
2.
School of Electrical Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China

Funds: Supported by National Natural Science Foundation of China (No. 62374020); Zibo Science and Technology SMEs Innovation Capacity Improvement Project (No. 2022TSGC0046); Shandong Provincial Science and Technology SMEs Innovation Capacity Improvement Project (No. 2022TSGC2290)

More Information

Author Bio:
LIU Kai (1972—), male, from Beijing, doctoral supervisor, received a bachelor's degree in applied electronic technology and a Ph.D. in fiber optic communications and optoelectronics from the Beijing University of Posts and Telecommunications (BUPT), China, in 1994 and 1999, respectively. He wrote a postdoctoral project on the research of optical pumped 1.3 μm VCSEL at the University of Southern California, Los Angeles, CA, USA, in 2000 and 2001. He is an Associate Professor at the School of Electrical Engineering, BUPT. He is the author of more than twenty refereed journal articles and conference papers on optoelectronic technology. His research interests include optical interconnects, optoelectronics integration, and photonic devices for optical fiber communications. He has recently contributed to the single-mode VCSEL for optical interconnects and high-speed, high-power UTC-PD for radio on fiber systems. E-mail: kliu@bupt.edu.cn

Corresponding author: kliu@bupt.edu.cn

摘要

摘要:
本文提出了一种具有电场调控层的新型改进型单行载流子光探测器（MUTC-PD）。该光探测器中，崖层后新增的p型掺杂电场调控层能够优化收集层中的电场强度，从而使光生电子在收集层中以峰值漂移速度输运，同时能够增强耗尽吸收层中的电场强度，优化其中光生载流子饱和速度输运特性。此外，器件收集层中光生电子的峰值漂移速度输运特性可以进一步优化其寄生电容特性，从而显著提升光探测器的3 dB响应带宽。经过仿真优化设计，获得了响应度为0.502 A/W，3-dB带宽为68 GHz的MUTC-PD，可应用于100 Gbit/s光接收机。
- 电子峰值速度 /
- 输运特性 /
- 改进型单行载流子光探测器 /
- 光纤通信 /
- 光互连
Abstract:
This paper proposes a novel modified uni-traveling-carrier photodiode (MUTC-PD) featuring an electric field regulation layer: a p-type doped thin layer inserted behind the PD’s n-doped cliff layer. This electric field regulation layer enhances the PD’s performance by not only reducing and smoothing the electric field intensity in the collector layer, allowing photo-generated electrons to transit at peak drift velocity, but also improving the electric field intensity in the depleted absorber layer and optimizing the photo-generated carriers’ saturated transit performance. Additionally, the transport characteristics of the peak drift velocity of photogenerated electrons in the device’s collection layer can be used to optimize its parasitic characteristics. The electron’s peak drift velocity compensates for the lost transit time. Thus improving the 3 dB bandwidth of the PD’s photo response. Finally obtains a MUTC-PD with a 3 dB bandwidth of 68 GHz at a responsivity of 0.502 A/W, making it suitable for 100 Gbit/s optical receivers.
- peak electron drift velocity /
- transit performance /
- MUTC-PD /
- optical fiber communication /
- optical interconnect

HTML全文

Figure 1. Epitaxial layer scheme

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Figure 2. SMUTC-PD’s electric field intensity distribution at different doping concentrations in the electric field regulation layer

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Figure 3. SMUTC-PD’s electron velocity distributions at different doping concentrations in the electric field regulation layer

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Figure 4. SMUTC-PD’s hole velocity distributions at different doping concentrations in the electric field regulation layer

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Figure 5. SMUTC-PD’s frequency response and parasitic capacitance with different collector layer thicknesses

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Figure 6. SMUTC-PD’s photo-response bandwidth and parasitic capacitance with different doping concentrations in the p-doped absorption region

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Figure 7. SMUTC-PD’s photo-response bandwidth and parasitic capacitance with different thicknesses of the p-doped absorption region

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Figure 8. SMUTC-PD’s frequency response

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Figure 9. SMUTC-PD’s responsivity

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Table 1. Material parameters of the simulation

Parameter	InP	InGaAs
Electron mobility, μ_n	5400 cm²/Vs	12000 cm²/Vs
Hole mobility, μ_p	200 cm²/Vs	300 cm²/Vs
Conduction band density of states, Nc	1.1×10¹⁹ cm⁻³	7.7×10¹⁸ cm⁻³
Valence band density of states, Nv	5.7×10¹⁷ cm⁻³	2.1×10¹⁷ cm⁻³
Electron saturation velocity	2.6×10⁷ cm/s	2.5×10⁷ cm/s
Hole saturation velocity	5×10⁶ cm/s	5×10⁶ cm/s
Electron and hole lifetime	2×10⁻⁹ s	1×10⁻⁷ s
Electron auger coefficient	3.7×10⁻³¹ cm⁶/s	3.2×10⁻²⁸ cm⁶/s
Hole auger coefficient	8.7×10⁻³⁰ cm⁶/s	3.2×10⁻²⁸ cm⁶/s
Real refractive index	3.2	3.51
Imaginary refractive index	0	0.106

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参考文献(19)

[1]	PAOLUCCI F, SGAMBELLURI A, EMMERICH R, et al. Openconfig control of 100G/400G filterless metro networks with configurable modulation format and FEC[C]. 2019 Optical Fiber Communications Conference and Exhibition (OFC), IEEE, 2019: 1-3, doi: 10.1364/OFC.2019.Tu3H.4.
[2]	ZHANG K R, HUANG Y Q, DUAN X F. Design and analysis of hybrid integrated high-speed mushroom vertical PIN photodetector[J]. Applied Mechanics and Materials, 2013, 411-414: 1455-1458. doi: 10.4028/www.scientific.net/AMM.411-414.1455
[3]	EFFENBERGER F J, JOSHI A M. Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector[J]. Journal of Lightwave Technology, 1996, 14(8): 1859-1864. doi: 10.1109/50.532024
[4]	KATO K, HATA S, KAWANO K, et al. Design of ultrawide-band, high-sensitivity p-i-n photodetectors[J]. IEICE Transactions on Electronics, 1993, E76-C(2): 214-221.
[5]	LI X, DEMIGUEL S, LI N, et al. Backside illuminated high saturation current partially depleted absorber photodetecters[J]. Electronics Letters, 2003, 39(20): 1466-1467. doi: 10.1049/el:20030927
[6]	ISHIBASHI T, ITO H. Uni-traveling-carrier photodiodes[J]. Journal of Applied Physics, 2020, 127(3): 031101. doi: 10.1063/1.5128444
[7]	LI Q L, LI K J, FU Y, et al. High-power flip-chip bonded photodiode with 110 GHz bandwidth[J]. Journal of Lightwave Technology, 2016, 34(9): 2139-2144. doi: 10.1109/jlt.2016.2520826
[8]	SRIVASTAVA S. Simulation study of InP-based uni-traveling carrier photodiode[D]. Cincinnati: University of Cincinnati, 2003.
[9]	LI J, XIONG B, LUO Y, et al. Ultrafast dual-drifting layer uni-traveling carrier photodiode with high saturation current[J]. Optics Express, 2016, 24(8): 8420-8428. doi: 10.1364/OE.24.008420
[10]	CHAO E F, XIONG B, SUN CH ZH, et al. D-band MUTC photodiodes with flat frequency response[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2022, 28(2): 3802208. doi: 10.1109/JSTQE.2021.3115488
[11]	ZHEN ZH, HAO R, XING D, et al. Nearly-ballistic optimization design of high-speed uni-traveling-carrier photodiodes[J]. Chinese Journal of Lasers, 2020, 47(10): 1006003. (in Chinese). doi: 10.3788/CJL202047.1006003
[12]	ADACHI S. Physical Properties of III-V Semiconductor Compounds[M]. New York: John Wiley & Sons, 1992.
[13]	SHRESTHA Y R. Numerical simulation of GaAsSb/InP uni-traveling carrier photodiode[D]. Cincinnati: University of Cincinnati, 2005.
[14]	ISHIBASHI T, FURUTA T, FUSHIMI H, et al. InP/InGaAs uni-traveling-carrier photodiodes[J]. IEICE Transactions on Electronics, 2000, E83-C(6): 938-949.
[15]	FRIESE S. Atlas.ti 8 Mac-user Manual Updated for Program Version 8.4[M]. Berlin: ATLAS.ti, 2019.
[16]	ZHANG P, ZHANG X P, ZHANG R. Design of broadband and high-output power uni-traveling-carrier photodiodes[J]. Optics Communications, 2016, 365: 194-207. doi: 10.1016/j.optcom.2015.11.075
[17]	ZHOU G, RUNGE P. Nonlinearities of high-speed p-i-n photodiodes and MUTC photodiodes[J]. IEEE Transactions on Microwave Theory and Techniques, 2017, 65(6): 2063-2072. doi: 10.1109/TMTT.2016.2645152
[18]	DONG X W, LIU K, HUANG Y Q, et al. Design of high-speed UTC-PD with optimization of its electron transit performance and parasitic capacitance[J]. IEEE Photonics Journal, 2023, 15(1): 1-9. doi: 10.1109/JPHOT.2023.3234063
[19]	SAKAI K, ISHIMURA E, NAKAJI M, et al. High-current back-illuminated partially depleted-absorber p-i-n photodiode with depleted nonabsorbing region[J]. IEEE Transactions on Microwave Theory and Techniques, 2010, 58(11): 3154-3160. doi: 10.1109/TMTT.2010.2075470