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自旋密度光栅和本征GaAs量子阱中的电子自旋双极扩散

余华梁 陈曦矅 狄俊安

余华梁, 陈曦矅, 狄俊安. 自旋密度光栅和本征GaAs量子阱中的电子自旋双极扩散[J]. 中国光学(中英文), 2013, 6(5): 710-716. doi: 10.3788/CO.20130605.0710
引用本文: 余华梁, 陈曦矅, 狄俊安. 自旋密度光栅和本征GaAs量子阱中的电子自旋双极扩散[J]. 中国光学(中英文), 2013, 6(5): 710-716. doi: 10.3788/CO.20130605.0710
YU Hua-liang, CHEN Xi-yao, DI Jun-an. Spin concentration grating and electron spin ambipolar diffusion in intrinsic GaAs multiple quantum wells[J]. Chinese Optics, 2013, 6(5): 710-716. doi: 10.3788/CO.20130605.0710
Citation: YU Hua-liang, CHEN Xi-yao, DI Jun-an. Spin concentration grating and electron spin ambipolar diffusion in intrinsic GaAs multiple quantum wells[J]. Chinese Optics, 2013, 6(5): 710-716. doi: 10.3788/CO.20130605.0710

自旋密度光栅和本征GaAs量子阱中的电子自旋双极扩散

doi: 10.3788/CO.20130605.0710
基金项目: 

Specialized Scientific Research Fundation of Higher Education Institution of Fujian Province, China(No.JK2011039);Natural Science Foundation of Fujian Province of China(No.2012D110)

详细信息
    通讯作者:

    余华梁

  • 中图分类号: O473

Spin concentration grating and electron spin ambipolar diffusion in intrinsic GaAs multiple quantum wells

More Information
    Author Bio:

    YU Hua-liang(1969-), male, born in Sanming, Fujian Province. He is a lecturer of physics Department, Minjiang University. His research interest is spintronics. E-mail:yuhualiang_02@163.com;CHEN Xi-yao(1964-), male, born in Fuzhou, Fujian Province. He is a professor of department of Physics, Fujian Teacher University. His research interest is novel optical devices based on photonic crystals. E-mail:Chenxy2628@yahoo.com.cn

    YU Hua-liang(1969-), male, born in Sanming, Fujian Province. He is a lecturer of physics Department, Minjiang University. His research interest is spintronics. E-mail:yuhualiang_02@163.com;CHEN Xi-yao(1964-), male, born in Fuzhou, Fujian Province. He is a professor of department of Physics, Fujian Teacher University. His research interest is novel optical devices based on photonic crystals. E-mail:Chenxy2628@yahoo.com.cn

  • 摘要: 为研究空穴对自旋极化电子扩散的影响,提出用自旋密度光栅方法来观察电子自旋扩散过程。由飞秒激光在本征GaAs多量子阱中激发产生瞬态自旋光栅和瞬态自旋密度光栅,并用于研究电子自旋扩散和电子自旋双极扩散。实验测得自旋双极扩散系数Das=25.4 cm2/s,低于自旋扩散系数Ds=113.0 cm2/s,表明自旋密度光栅中电子自旋扩散受到空穴的显著影响。

     

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出版历程
  • 收稿日期:  2013-07-13
  • 修回日期:  2013-09-15
  • 刊出日期:  2013-10-10

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