SU-8光刻胶应变分布光学全场检测方法

王鑫; 王永红; 吕有斌; 卢怡如; 涂思琪

doi:10.3788/CO.20160903.0379

SU-8光刻胶应变分布光学全场检测方法

doi: 10.3788/CO.20160903.0379

合肥工业大学仪器科学与光电工程学院, 安徽合肥 230009

基金项目:

国家自然科学基金资助项目 No.51375136

中航产学研专项资助项目 No.CXY2013HFGD22

详细信息

作者简介:
王鑫(1990-),女,安徽安庆人,硕士研究生,2013年于合肥工业大学获得学士学位,主要从事激光剪切散斑干涉技术方面的研究。E-mail:wangxinqj@126.com

通讯作者:
王永红(1972—)，男，安徽合肥人，博士后，教授，研究生导师，1994年于合肥工业大学获得学士学位,1997年于中科院安徽光机所获得硕士学位，2004年于合肥工业大学获得博士学位，主要从事精密测试技术及仪器、光电检测、机器视觉等方面的研究。E-mail:yhwang@hfut.edu.cn

中图分类号: TP394.1;TH691.9
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出版历程
- 收稿日期: 2016-02-12
- 修回日期: 2016-03-18
- 刊出日期: 2016-05-25

Whole field optical detection method of strain distribution of SU-8 photoresist

School of Instrument Science and Opto-electronic Engineering, Hefei University of Technology, Hefei 230009, China

Funds:

Supported by National Natural Science Foundation of China No.51375136

Special Project of University & Research of AVIC No.CXY2013HFGD22

摘要

摘要: 由于SU-8光刻胶的内应力将会影响高深宽比结构的全金属光栅的制作质量,本文针对近年来SU-8光刻胶应力测量困难的情况,提出了一种基于激光剪切散斑干涉技术的SU-8光刻胶应变分布测量的新方法。该方法通过对被测胶体加载前后两幅干涉图像的处理,直接得到被测胶体结构的全场应变分布情况,由胶体的应变变形数据即可反映出内应力的变化和分布趋势。同时使用ANSYS有限元分析软件对同一被测胶体进行应变仿真模拟研究,获得胶体结构的变形场仿真数据。组建了实验系统,进行了实验验证,结果表明:实际测量变形量约为1.189 μm,仿真的最大变形量为1.088 μm,测量误差在允许范围内,且测量的形变趋势与仿真模拟结果相一致,表明激光剪切散斑干涉技术可应用于SU-8光刻胶的应变分布全场无损检测。
- 剪切散斑干涉 /
- SU-8光刻胶 /
- 应力分布 /
- 应变 /
- 仿真模拟
Abstract: The quality of full metal grating is affected by internal stress of SU-8 photoresist. Considering the stress measurement of SU-8 photoresist is difficult in recent years, the shearography is applied to measure the strain distribution of SU-8 photoresist which corresponds to the stress distribution of SU-8 photoresist. Strain distribution is acquired by processing interferometer images which are recorded before and after loading on the tested photoresist. The simulation result of the same photoresist is obtained by using the ANSYS finite element analysis software. The shearography measurement system is setup and demonstration experimental is carried out. The deformation of actual measurement is about 1.189 μm, and the deformation of simulation is 1.088 μm. The measurement error is in the allowed range. The deformation trend of experimental result is consistent with the simulation result. Results show that the shearography in SU-8 photoresist strain distribution measurement is valid and may be applied to measure whole field strain distribution of SU-8 photoresist in lossless.
- shearography /
- SU-8 photoresist /
- stress distribution /
- strain /
- simulation

HTML全文

图 1 激光剪切散斑干涉原理

Figure 1. Principle diagram of laser shearing speckle interference

下载: 全尺寸图片幻灯片

图 2 相位条纹及形变量分布

Figure 2. Phase map and curve of shpae variable distribution

下载: 全尺寸图片幻灯片

图 3 涂覆光刻胶的铜片

Figure 3. Photoresist on the sheet copper

下载: 全尺寸图片幻灯片

图 4 剪切散斑干涉测量装置

Figure 4. Shearing speckle interferometry device

下载: 全尺寸图片幻灯片

图 5 胶体变形的相位条纹

Figure 5. Phase map of the photoresist deformation

下载: 全尺寸图片幻灯片

图 6 黑线区域的变形量

Figure 6. Deformation of the measuring result in the black line

下载: 全尺寸图片幻灯片

图 7 胶体结构变形仿真ANSYS有限元分析图

Figure 7. ANSYS simulation of photoresist structure deformation

下载: 全尺寸图片幻灯片

表 1 材料的性能参数

Table 1. Performance parameters of the materials

Material Density/(g·cm^-3) Modulus of elasticity/GPa Poisson′s ratio Coefficient of expansion.(10^-6·℃^-1)

Cu 8.8 110 0.35 18.5

SU-8 1.0 - 0.22 52.0

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参考文献(15)

[1]	张立国,陈迪,杨帆,等.SU-8胶光刻工艺研究[J].光学精密工程,2002,10(3):266-270. LI B,LIU M,CHEN Q. Low-stress ultra-thick SU8 UV photolithography process for MEMS[J]. J. Microlithography Microfabrication & Microsystems,2005,4(4):043008.
[2]	LORENZ H,DESPONT M,FAHRNI N,et al.. High-aspect-ratio, ultrathick, negative-tone near-UV photoresist and its applications for MEMS[J]. Sensors & Actuators A Physical,1998,64(1):33-39.
[3]	CHANG H K,KIM Y K. UV-LIGA process for high aspect ratio structure using stress barrier and C-shaped etch hole[J]. Sensors & Actuators A Physical,2000,84(3):342-350.
[4]	CHANG H K,KIM Y K. UV-LIGA process for high aspect ratio structure using stress barrier and C-shaped etch hole[J]. Sensors & Actuators A Physical,2000,84(3):342-350.
[5]	WILLIAMS J D,WANG W. Study on the postbaking process and the effects on UV lithography of high aspect ratio SU8 microstructures[J]. J. Microlithography Microfabrication & Microsystems,2004,3(4):563-568.
[6]	杜立群,朱神渺.微机电系统中SU-8厚光刻胶的内应力研究[J].光学精密工程,2007,15(9):1377-1382. DU L Q,ZHU S M. The internal stress research of SU-8 thick photoresist in microelectromechanical system[J]. Opt. Precision Eng.,2007,15(9):1377-1382.(in Chinese)
[7]	王永红,梁恒,王硕,等.数字散斑相关方法及应用进展[J].中国光学,2013,6(4):470-480. WANG Y H,LIANG H,WANG S,et al.. Progress in digital speckle correlation method and application[J]. Chinese Optics,2013,6(4):470-480.(in Chinese)
[8]	王永红,冯家亚,王鑫,等.基于狭缝光阑的剪切散斑干涉动态测量[J].光学精密工程,2015,23(3):645-651. WANG Y H,FENG J Y,WANG X,et al.. Shearography system based on slit aperture for dynamic measurement[J]. Opt. Precision Eng.,2015,23(3):645-651.(in Chinese)
[9]	杨连祥,祝连庆,谢辛,等.电子散斑干涉测量中相移技术的新发展[J].北京信息科技大学学报:自然科学版,2013(2):1-8. YANG L X,ZHU L Q,XIE X,et al.. The new development of phase-shift technology in the electronic speckle interferometry[J]. J. Beijing University of Information Science and Technology:JCR Science Edition,2013,4(2):1-8.(in Chinese)
[10]	王永红,李骏睿,孙建飞,等.散斑干涉相位条纹图的频域滤波处理[J].中国光学,2014(3):389-395. WANG Y H,LI J R,SUN J F,et al. The frequency domain filtering processing of speckle interference phase map[J]. Chinese Optics,2014,(3):389-395.(in Chinese)
[11]	WALDNER S. Removing the image-doubling in shearography by reconstruction of the displacement field[J]. Optics Communications,1996,127(s 1-3):117-126.
[12]	WALDNER A S. Removing the image-doubling in shearography: theory and application[J]. SPIE,1996,2944:247-255.
[13]	单云冲,阮久福,杨军,等.太赫兹金属双光栅超厚胶光刻工艺[J].强激光与粒子束,2014,26(5):201-205.
[14]	PARK S,CHUNG S,ACKLER H,et al.. Viscoelastic material properties of SU-8 and carbon-nanotube-reinforced SU-8 materials[C]. ASME 2006 International Mechanical Engineering Congress and Exposition,Chicago,USA,2006:43-52.
[15]	CHUNG S,PARK S. Effects of temperature on mechanical properties of SU-8 photoresist material[J]. J. Mechanical Science & Technology,2013,27(9):2701-2707.