留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

蓝区无机薄膜电致发光材料研究进展

王小平 宁仁敏 王丽军 柯小龙 陈海将 宋明丽 刘凌鸿

王小平, 宁仁敏, 王丽军, 柯小龙, 陈海将, 宋明丽, 刘凌鸿. 蓝区无机薄膜电致发光材料研究进展[J]. 中国光学(中英文), 2017, 10(1): 13-24. doi: 10.3788/CO.20171001.0013
引用本文: 王小平, 宁仁敏, 王丽军, 柯小龙, 陈海将, 宋明丽, 刘凌鸿. 蓝区无机薄膜电致发光材料研究进展[J]. 中国光学(中英文), 2017, 10(1): 13-24. doi: 10.3788/CO.20171001.0013
WANG Xiao-ping, NING Ren-min, WANG Li-jun, KE Xiao-long, CHEN Hai-jiang, SONG Ming-li, LIU Ling-hong. Research progress of the blue area of inorganic thin film electroluminescent material[J]. Chinese Optics, 2017, 10(1): 13-24. doi: 10.3788/CO.20171001.0013
Citation: WANG Xiao-ping, NING Ren-min, WANG Li-jun, KE Xiao-long, CHEN Hai-jiang, SONG Ming-li, LIU Ling-hong. Research progress of the blue area of inorganic thin film electroluminescent material[J]. Chinese Optics, 2017, 10(1): 13-24. doi: 10.3788/CO.20171001.0013

蓝区无机薄膜电致发光材料研究进展

基金项目: 

上海市教委重点创新资助项目 14ZZ137

详细信息
    通讯作者:

    王小平(1964-), 男, 陕西合阳人, 博士, 教授, 研究生导师, 1986年毕业于东北师范大学获得学士学位, 2002年于郑州大学获得博士学位, 主要从事固体薄膜材料光电特性方面的研究, E-mail:wxpchina64@aliyun.com

  • 中图分类号: O484.1

Research progress of the blue area of inorganic thin film electroluminescent material

Funds: 

Key Innovation Project of Shanghai Municipal Education Commission 14ZZ137

More Information
  • 摘要: 介绍了蓝区无机薄膜电致发光材料的应用、电致发光器件的发光原理及结构类型,综述了蓝区无机薄膜电致发光材料的种类及其各自存在的问题,重点概述了已实用化的蓝区无机电致发光材料GaN的研究及应用现状。由于目前多数蓝光芯片核心技术被少数国外公司垄断,我国所掌握的技术离世界先进水平仍有相当大的差距,因此迫切需要国内能够加大对蓝区电致发光材料的研发。

     

  • 图 1  无机薄膜电致发光机理示意图

    Figure 1.  Schematic diagram of thin film electroluminescent mechanism

    图 2  LED器件结构简图

    Figure 2.  Structure diagram of LED device

    图 3  分层优化的AC-TFEL器件结构

    Figure 3.  Layered optimization of AC-TFEL device

    图 4  GaN基蓝色LED器件发光照片

    Figure 4.  Light emission image of a GaN LED device

    图 5  倒装芯片结构简图

    Figure 5.  Schematic diagram of flip-chip

    图 6  SiC衬底GaN基LED器件发光光谱曲线

    Figure 6.  GaN based blue LED spectra on SiC substrate

    图 7  硅衬底GaN基蓝光、绿光以及黄光LED光功率及外量子效率与工作电流关系

    Figure 7.  Relationship between EQE and working current for GaN based blue, green and yellow LED on silicon substrate

    图 8  MOCVD法研制的SrS:Ce电致发光光谱

    Figure 8.  EL emission spectrum of MOCVD SrS:Ce

    图 9  SrS:Cu TFEL器件的电致发光光谱曲线

    Figure 9.  EL emission spectrum of SrS:Cu TFEL

    图 10  Ce3+掺杂金刚石薄膜电致发光照片

    Figure 10.  Light emission image of the EL device

    图 11  Diamond/CeF3 TFEL器件的电致发光光谱曲线

    Figure 11.  EL emission spectrum of diamond/CeF3

  • [1] NAKAMURA S, MUKAI T, SENOH M. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes[J]. Applied Physics Letters, 1994, 64(13):1687-1689. doi: 10.1063/1.111832
    [2] ZHONG H, TYAGI A, FELLOWS N N, et al.. High power and high efficiency blue light emitting diode on freestanding semipolar (1011) bulk GaN substrate[J]. Applied Physics Letters, 2007, 90(90):233504-233504-3.
    [3] DENAULT K A, CANTORE M, NAKAMURA S, et al.. Efficient and stable laser-driven white lighting[J]. Aip Advances, 2013, 3(7):537-544.
    [4] YAMAGUCHI S, KARIYA M, NITTA S, et al.. Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy[J]. Applied Physics Letters, 1999, 75(26):4106-4108. doi: 10.1063/1.125551
    [5] RACK P D, HOLLOWAY P H. The structure, devicephysics, and material properties of thin film electroluminezcent displays[J]. Materials Science & Engineering R-reports, 1998, 21(4):171-219. https://www.researchgate.net/publication/240430719_The_Structure_Device_Physics_and_Material_Properties_of_Thin_Film_Electroluminescent_Displays
    [6] 徐叙瑢, 雷刚, 申猛燕.第三代电致发光的尝试[J].自然科学进展, 1991, 1(3):62-66. http://www.cnki.com.cn/Article/CJFDTOTAL-ZKJZ199101008.htm

    XU X R, LEI G, SHEN M Y, et al.. The the 3rd-generation electroluminescent attempt[J]. Progress in Natural Science, 1991, 1(3):62-66.(in Chinese) http://www.cnki.com.cn/Article/CJFDTOTAL-ZKJZ199101008.htm
    [7] XU X R, LEI G, SHEN M Y, et al.. Preliminary trial of third generation electroluminescence (EL)[J]. J. Crystal Growth, 1990, 101(1-4):1004-1008. doi: 10.1016/0022-0248(90)91122-7
    [8] HE Q F, XU ZH, LOU D A, et al.. Monte Carlo simulation of the effect of impact ionization in thin-film electroluminescent devices[J]. Acta Physica Sinica, 2006, 55(4):1997-2002. http://en.cnki.com.cn/Article_en/CJFDTOTAL-WLXB200604075.htm
    [9] 钟国柱, 孙甲明, 付国柱, 等.复合绝缘层交流薄膜电致发光显示屏的综合设计[J].光电子技术, 1996, 17(3):191-196. http://www.cnki.com.cn/Article/CJFDTOTAL-GDJS199604004.htm

    ZHONG G ZH, SUN J M, FU G ZH, et al.. Composite insulation AC thin electroluminescent display design[J]. Optoelectronic Technology, 1996, 17(3):191-196.(in Chinese) http://www.cnki.com.cn/Article/CJFDTOTAL-GDJS199604004.htm
    [10] AMMO H, SAWAKI N, AKASAKI I, et al.. Metalorganic vaporphase epitaxial growth of a high quality GaN film using an AlN buffer layer[J]. Applied Physics Letters, 1986, 48(5):353-355. doi: 10.1063/1.96549
    [11] NAKAMURA S, MUKAI T, SENO M, et al.. High Power GaN p-n junction blue light-emitting diode[J]. J. Appl. Phys., 1991, 30(12A):1998-2001. http://d.wanfangdata.com.cn/NSTLQK_10.1143-JJAP.30.L1998.aspx
    [12] 周仕忠, 林志霆, 王海燕, 等.图形化蓝宝石衬底GaN基LED的研究进展[J].半导体技术, 2012, 37(6):417-424. http://www.cnki.com.cn/Article/CJFDTOTAL-BDTJ201206001.htm

    ZHOU SH ZH, LIN ZH T, WANG H Y, et al.. Research progress of patterned sapphire substrate for gan-based light-emitting diodes[J]. Semiconductor Technology, 2012, 37(6):417-424.(in Chinese) http://www.cnki.com.cn/Article/CJFDTOTAL-BDTJ201206001.htm
    [13] CHANG SH J, CHEN W S, SHEI S C, et al.. Highly reliable high-brightness GaN-based flip chip LEDs[J]. IEEE Transactions on Advanced Packaging, 2007, 30(4):752-757. doi: 10.1109/TADVP.2007.898510
    [14] JOHN E, AMBER A, MIKE B, et al.. High efficiency GaN-based LEDs and lasers on SiC[J]. J. Crystal Growth, 2004, 272(1):242-250. http://d.scholar.cnki.net/detail/SJES_U/SJES13011601245108
    [15] XU H Y, CHEN X F, PENG YAN, et al.. Progress in research of GaN-based LEDs fabricated on SiC substrate[J]. Chinese Physics B, 2015, 24(6):31-38. http://cpb.iphy.ac.cn/CN/abstract/abstract64587.shtml
    [16] GUHA S, BOJARCZUK N A. Ultraviolet and violet GaN light emitting diodes on silicon[J]. Applied Physics Letters, 1998, 72(4):415-417. doi: 10.1063/1.120775
    [17] WANG G X, XIONG CH B, LIU J L, et al.. Improving p-type contact characteristics by Ni-assisted annealing and effects on surface morphologic evolution of InGaN LED films grown on Si (111)[J]. Applied Surface Science, 2011, 257(20):8675-8678. doi: 10.1016/j.apsusc.2011.05.046
    [18] JIANG F Y, LIU J L, WANG L, et al.. High optical efficiency GaN based blue LED on silicon substrate[J]. Scientia Sinica, 2015, 45(6):67302-067302. http://en.cnki.com.cn/Article_en/CJFDTOTAL-JGXK201506003.htm
    [19] 陈振.基于氮化镓GaN硅衬底的LED[J].集成电路应用, 2015(4):32-33. http://www.cnki.com.cn/Article/CJFDTOTAL-JCDL201504011.htm

    CHEN ZH. GaN LED based on silicon substrate[J]. Applications of IC, 2015(4):32-33.(in Chinese) http://www.cnki.com.cn/Article/CJFDTOTAL-JCDL201504011.htm
    [20] LEE Y CH, LU T Y, LAI Y H, et al.. Simulations of light extraction and light propagation of light emitting diodes featuring silicon carbide substates[J]. Optical Materials, 2013, 35(6):1236-1242. doi: 10.1016/j.optmat.2013.01.027
    [21] XIA Y, BRAULT J, DAMILANO B, et al.. Blue light-emitting diodes grown on ZnO substrates[J]. Applied Physics Express, 2013, 6(4):042101-042101-4. doi: 10.7567/APEX.6.042101
    [22] XIE J, NI X, FAN Q, ET A L. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers[J]. Applied Physics Letters, 2008, 93(12):121107-121107-3. doi: 10.1063/1.2988324
    [23] 武芹, 全知觉, 王立, 等.Si (111)衬底切偏角对GaN基LED外延膜的影响[J].发光学报, 2015, 36(4):466-471. doi: 10.3788/fgxb

    WU Q, QUAN ZH J, WANG L, et al.. Influence of substrate miscut on properties of GaN-based LED films grown on Si (111)[J]. Chinese J. Luminescence, 2015, 36(4):466-471.(in Chinese) doi: 10.3788/fgxb
    [24] OHMI K, FUJIMOTO K, TANAKA S, et al.. Improvement of crystallographic and electroluminescent characteristics of SrS:Ce thin film devices by post-deposition annealing in Ar-S atmosphere[J]. J. Applied Physics, 1995, 78(1):428-434. doi: 10.1063/1.360621
    [25] MORISHITA T, MATSUI M, TONOMURA S, et al.. Distribution of luminescent centers in electroluminescent SrS:Ce films prepared by post-annealing in H2S[J]. Applied Surface Science, 2000, 157(1-2):61-66. doi: 10.1016/S0169-4332(99)00518-8
    [26] BARTHKARL W, LAU J E, PETERSON G G, et al.. Metallorganic chemical vapor deposition of SrS:Ce for thin film electroluminescent device applications[J]. J. Electrochemical Society, 2000, 147(6):2174-2180. doi: 10.1149/1.1393503
    [27] MISHRA S, KSHATRI D S, KHARE A, et al.. SrS:Ce3+, thin films for electroluminescence device applications deposited by electron-beam evaporation deposition method[J]. Materials Letters, 2016, 183:191-196. doi: 10.1016/j.matlet.2016.07.097
    [28] KANE J, HARTY W, LING M, et al.. New electroluminescent phosphors based on strontium sulfide[C]. Symposium of Information Display, San Diego, CA, USA, 1985:163-166.
    [29] SUN S S. A new blue emitting TFEL phosphor:SrS:Cu[J]. Displays, 1999, 19(4):145-149. doi: 10.1016/S0141-9382(98)00044-4
    [30] CHOE J Y, BLOMQUIST S M, MORTON D C, et al.. Characteristics of SrS:Cu thin-film electroluminescent device fabricated by pulsed-laser deposition[J]. Applied Physics Letters, 2002, 80(22):4124-4126. doi: 10.1063/1.1483925
    [31] ANILA E I, JAYARAJ M K. Low temperature deposition of SrS:Cu, F ACTFEL device by electron beam evaporation[J]. J. Luminescence, 2010, 130(11):2180-2183. doi: 10.1016/j.jlumin.2010.06.016
    [32] ANILA E I, SANJAYKUMAR I P, JAYARAJ M K. Colour control in SrS:Cu, Cl powder phosphor[J]. Materials Science & Engineering A, 2011, 530(11):624-627.
    [33] YAMADA N, ITAKURA K, KURACHI Y, et al.. Evaluation of step-annealed SrS:Cu films for blue EL elements[J]. Ieice Technical Report Electron Devices, 2008, 108(34):11-14.
    [34] KATAYAMA M, KATO A, ITO N, et al.. Electroluminescent device:US 5612591[P]. 1997-03-18.
    [35] ZHANG X M, WU H, ZENG H P, et al.. Luminescent properties of SrGa2S4:Eu2+ and its application in green-LEDs[J]. J. Rare Earths, 2007, 25(6):701-705. doi: 10.1016/S1002-0721(08)60010-1
    [36] RONOT-LIMOUSIN I, GARCIA A, FOUASSIER C, et al.. Cerium concentration and temperature dependence of the luminescence of SrGa2S4:Ce, Na, a blue-emitting material for electroluminescent and high current density cathodoluminescent displays[J]. J. Electrochemical Society, 1997, 144(2):687-694. doi: 10.1149/1.1837469
    [37] 王林军, 陈忠传, 赵伟明, 等.三元系SrGa2S4:Ce蓝色发光材料[J].发光学报, 1996(4):332-336. http://www.cqvip.com/QK/92489X/199604/2236662.html

    WANG L J, CHEN ZH CH, ZHAO W M, et al.. Ternary system SrGa2S4:Ce blue light-emitting materials[J]. Chinese J. Luminescence, 1996(4):332-336.(in Chinese) http://www.cqvip.com/QK/92489X/199604/2236662.html
    [38] 王林军, 陈忠传.赵伟明, 等.蓝色发光材料MGa2S4:Ge (M=Ca, Sr)发光特性的研究[J].无机材料学报, 1997(3):321-326. http://www.cqvip.com/QK/93432X/199703/2750025.html

    WANG L J, CHEN ZH C. ZHAO W M, et al.. Blue light emitting material MGa2S4:Ge (M=Ca, Sr) light-emitting characteristics research[J]. J. Inorganic Materials, 1997(3):321-326.(in Chinese) http://www.cqvip.com/QK/93432X/199703/2750025.html
    [39] BAYRAMOV A, NAJAFOV H, KATO A, et al.. Feasibility of TFEL application of Ce-doped CaGa2S4, and SrGa2S4, films prepared by flash evaporation method[J]. J. Physics & Chemistry of Solids, 2003, 64(10):1821-1824.
    [40] PETRYKIN V, KAKIHANA M. Synthesis of BaAl2S4:Eu electroluminescent material by the polymerizable complex method combined with CS2 sulfurization[J]. J. American Ceramic Society, 2009, 92(s1):27-31.
    [41] RUNHONG, NOBORU, MIUR A, et al.. Optical properties of blue-emitting BaAl2S4:Eu thin-films for inorganic EL display[J]. J. Rare Earths, 2006, 24(z2):119-121.
    [42] TANAKA I, INOUE Y, TANAKA K, et al.. Crystallographic and luminescent characterizations of blue-emitting BaAl2S4:Eu electroluminescent thin films[J]. J. Luminescence, 2002, 96(1):69-74. doi: 10.1016/S0022-2313(01)00214-9
    [43] MIURA N, KAWANISHI M, MATSUMOTO H, et al.. High-luminance blue-emitting BaAl2S4:Eu thin-film electroluminescent devices[J]. Japanese J. Applied Physics, 1999, 38(38):1291-1292.
    [44] INOUE Y, TANAKA I, TANAKA K, et al.. Atomic composition and structural properties of blue emitting BaAl2S4:Eu2+ electroluminescent thin films[J]. Japanese J. Applied Physics, 2001, 40(4A):2451-2455. http://www.osti.gov/nle/topicpages/a/atmospheric+optics+sb.html
    [45] YU R J, NOH H I, MOON B K. Enhanced photoluminescence of BaAl2S4:Eu2+ phosphor by Mg2+ ions doping[J]. Ceramics International, 2013, 39(8):9709-9713. doi: 10.1016/j.ceramint.2013.04.041
    [46] WOLFE R, WOODS J. Electroluminescence of semiconducting diamonds[J]. Physical Review, 1957, 105(3):921-922. doi: 10.1103/PhysRev.105.921
    [47] DEAN P J. Bound excitons and donor-acceptor pairs in natural and synthetic diamond[J]. Physical Review, 1965, 139(2A):588-602. doi: 10.1103/PhysRev.139.A588
    [48] KAWARADA H, NISHIMURA K, ITO T, et al.. Blue and green cathodoluminescence of synthesized diamond films formed by plasma-assisted chemical vapour deposition[J]. Japanese J. Applied Physics, 1988, 27(4):683-686. doi: 10.1143/JJAP.27.L683
    [49] TANIGUCHI Y, HIRABAYASHI K, IKOMA K, et al.. Blue electrooluminescence of thin-film diamond made by the hot-filament method[J]. Jpn. J. Appl. Phys., 1989, 28(10):1848-1850. https://www.researchgate.net/publication/243726403_Blue_Electroluminescence_of_Thin-Film_Diamond_Made_by_the_Hot-Filament_Method
    [50] ZHANG B L, SHEN SH P, WANG J E, et al.. Blue-green electroluminescence of free-standing diamond thin films[J]. Chinese Phys. Lett., 1994, 11(11):235-238. https://www.researchgate.net/publication/230991457_Blue-Green_Electroluminescence_of_Free-Standing_Diamond_Thin_Films
    [51] MANFREDOTTI C, WANG F, POIESELLO P, et al.. Blue-violet electroluminescence and photocurrent spectra from polycrystalline chemical vapor deposited diamond film[J]. Appl. Phys. Lett., 1995, 67(23):3376-3378. doi: 10.1063/1.114898
    [52] WANG X P, WANG L J, ZHANG B L, et al.. Electroluminescence of diamond:Ce thin films[J]. Semi.Sci.Tech.(UK) 2003, 18:144-146.
    [53] WANG X P, WANG L J, ZHANG Q R, et al.. Electroluminescence spectrum shift with switching behaviour of diamond thin films[J]. Chinese Phys. Lett/, 2003, 20(10):1868 doi: 10.1088/0256-307X/20/10/361
    [54] YANG C, WANG X P, WANG L J, et al.. White electroluminescence of n-ZnO:Al/p-diamond heterostructure devices[J]. Chinese. Phys. B, 2013, 22(8):088101. doi: 10.1088/1674-1056/22/8/088101
    [55] WANG X P, LIU, WANG L J, et al.. Thickness-dependent white electroluminescence from diamond/CeF3/SiO2multilayered films[J]. Applied Physics Letters, 2014, 104(12):121110-121110-4. doi: 10.1063/1.4869754
    [56] DORENBOS P. Crystal field splitting of lanthanide 4fn-15d-levels in inorganic compounds[J]. J. Alloys and Compounds, 2002, 341:156-159. doi: 10.1016/S0925-8388(02)00056-7
    [57] CHEN H J, WANG X P, WANG L J, et al.. Bright blue electroluminescence of diamond/CeF3 composite films[J]. Carbon, 2016, 109:192-195. doi: 10.1016/j.carbon.2016.07.061
    [58] 董国义, 林琳, 韦志仁, 等.退火处理对ZnS:Cu, Mn电致发光材料亮度的影响[J].发光学报, 2005, 26(6):733-736. http://www.cnki.com.cn/Article/CJFDTOTAL-FGXB200506008.htm

    DONG G Y, LIN L, WEI ZH R, et al.. Annealing treatment of ZnS:administered Cu, Mn electroluminescent materials, the influence of brightness[J]. Chinese J. Luminescence, 2005, 26(6):733-736.(in Chinese) http://www.cnki.com.cn/Article/CJFDTOTAL-FGXB200506008.htm
    [59] 朱小平, 于长凤, 张脉官, 等.无机电致发光材料的制备方法与研究现状[J].中国陶瓷, 2006, 42(10):19-23. http://www.cnki.com.cn/Article/CJFDTOTAL-ZGTC200610005.htm

    ZHU X P, YU CH F, ZHANG M G, et al.. Electroluminescent materials preparation methods and research status[J]. China Ceramics, 2006, 42(10):19-23.(in Chinese) http://www.cnki.com.cn/Article/CJFDTOTAL-ZGTC200610005.htm
    [60] MUSCELLI W C, LIMA K D O, AQUINO F T, et al.. Blue and NIR emission from nanostructured Tm3+/Yb3+ co-doped SiO2-Ta2O5for photonic applications[J]. 2016, 49(17):175107.
    [61] 钟国柱.Ⅱ-Ⅵ族化合物薄膜电致发光[J].发光学报, 2006, 27(1):6-17. http://www.cnki.com.cn/Article/CJFDTOTAL-FGXB200601002.htm

    ZHONG G ZH. Ⅱ-Ⅵ compound thin film electroluminescent[J]. Chinese J. Luminescence, 2006, 27(1):6-17.(in Chinese) http://www.cnki.com.cn/Article/CJFDTOTAL-FGXB200601002.htm
    [62] SHEN H, BAI X, WANG A, WANG H, et al.. High-efficient deep-blue light-emitting diodes by using high quality ZnxCd1-xS/ZnS core/shell quantum dots[J]. Advanced Functional Materials, 2014, 24(16):23672373.
    [63] YI L, HOU Y, HUI Z, et al.. The photo-and electro-luminescence properties of ZnO:Zn thin film[J]. Displays, 2000, 21(21):147-149. https://www.researchgate.net/publication/240914739_Photo-_and_electro-luminescence_properties_of_ZnOZn_thin_film
    [64] CHEN H, DING J, GUO W, et al.. Blue-green emission mechanism and spectral shift of Al-doped ZnO films related to defect levels[J]. Rsc Advances, 2013, 3(30):12327-12333. doi: 10.1039/c3ra40750k
    [65] BAO N, LIU Y, LI Z W, et al./Construction of order mesoporous (Eu-La)/ZnO composite material and its luminescent characters[J]. J. Luminescence, 2016, 177:409-415. doi: 10.1016/j.jlumin.2016.05.025
    [66] GIL-ROSTRA J, FERRER F J, MART N I R, et al.. Cathode and ion-luminescence of Eu:ZnO thin films prepared by reactive magnetron sputtering and plasma decomposition of non-volatile precursors[J]. J. Luminescence, 2016, 178:139-146. doi: 10.1016/j.jlumin.2016.01.034
    [67] 衣立新, 张希清, 侯延冰, 等.富锌型氧化锌薄膜的蓝区及近紫外区发光特性[J].科学通报, 2001, 48(6):517-520. http://www.cnki.com.cn/Article/CJFDTOTAL-KXTB200106017.htm

    YI L X, ZHANG X Q, HOU Y B, et al.. Type zinc rich zinc oxide thin film blue area and near ultraviolet light-emitting character[J]. Chinese Science Bulletin, 2001, 48(6):517-520.(in Chinese) http://www.cnki.com.cn/Article/CJFDTOTAL-KXTB200106017.htm
    [68] TSUKAZAKI A, KUBOTA M, OHTOMO A, et al.. Blue light-emitting diode based on ZnO[J]. Japanese J. Applied Physics, 2005, 44(21):643-645. doi: 10.1143/JJAP.44.L643
    [69] ZHANG X, LU M, ZHANG Y, et al.. Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film[J]. Advanced Materials, 2009, 21(27):2767-2770. doi: 10.1002/adma.200802686
    [70] XU S, XU C, LIU Y, et al.. Ordered nanowire array blue/near-UV light emitting diodes[J]. Advanced Materials, 2010, 22(22):4749-53. http://www.docin.com/p-1727411623.html
    [71] CHO C Y, KIM N Y, KANG J W, et al.. Improved light extraction efficiency in blue light-emitting diodes by SiO2-coated ZnO nanorod arrays[J]. Applied Physics Express, 2013, 6(4):532-538. https://www.researchgate.net/profile/Chu-Young_Cho/publication/259852745_Improved_Light_Extraction_Efficiency_in_Blue_Light-Emitting_Diodes_by_SiO2_-Coated_ZnO_Nanorod_Arrays/links/00b4952e27ef5331b3000000.pdf
    [72] 张吉英, 申德振, 杨宝均, 等.ZnSe pn二极管蓝绿色电致发光[J].发光学报, 1997, 18(2):110-114. http://www.cnki.com.cn/Article/CJFDTOTAL-FGXB702.003.htm

    ZHANG J Y, SHEN D ZH, YANG B J, et al.. ZnSe pn blue-green electroluminescent diode[J]. Chinese J. Luminescence, 1997, 18(2):110-114.(in Chinese) http://www.cnki.com.cn/Article/CJFDTOTAL-FGXB702.003.htm
    [73] JEON H, DING J, NURMIKKO A V, et al.. ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications[J]. Applied Physics Letters, 1992, 60(7):892-894. doi: 10.1063/1.106496
    [74] MINAMI T, KUROI Y, MIYATA T, et al.. ZnGa2O4, as host material for multicolor-emitting phosphor layer of electroluminescent devices[J]. J. Luminescence, 1997, s72-74(97):997-998.
    [75] 付作岭, 董晓睿, 盛天琦, 等.纳米晶体中稀土离子的发光性质及其变化机理研究[J].中国光学, 2015, 8(1):139-146. doi: 10.3788/co.

    FU Z L, DONG X R, SHENG T Q, et al.. Luminescene properties and various mechanisms of rare earth ions in the nanocrystals[J]. Chinese Optics, 2015, 8(1):139-146.(in Chinese) doi: 10.3788/co.
    [76] MIYATA T, MOCHIZUKI Y, MINAMI T, et al.. Blue-violet phosphate phosphor thin films for EL[J]. Thin Solid Films, 2006, 496(1):174-178. doi: 10.1016/j.tsf.2005.08.248
    [77] SMET P F, POELMAN D, MEIRHAEGHE R L V. Blue electroluminescence from multilayered BaS:Eu/Al2S3 thin films[J]. J. Applied Physics, 2004, 95(1):184-190. doi: 10.1063/1.1630372
    [78] SUBRAHMANYAM K S, KUMAR P, NAG A, et al.. Blue light emitting graphene-based materials and their use in generating white light[J]. Solid State Communications, 2010, 150(37-38):1774-1777. doi: 10.1016/j.ssc.2010.07.017
    [79] KOU L, LI F, CHEN W, et al.. Synthesis of blue light-emitting graphene quantum dots and their application in flexible nonvolatile memory[J]. Organic Electronics, 2013, 14(6):1447-1451. doi: 10.1016/j.orgel.2013.03.016
    [80] KAN D, TERASHIMA T, KANDA R, et al.. Blue-light emission at room temperature from Ar+-irradiated SrTiO3[J]. Nature Materials, 2005, 4(11):816-819. doi: 10.1038/nmat1498
    [81] PAZIK R. Up-conversion emission and in vitro cytotoxicity characterization of blue emitting, biocompatible SrTiO3 nanoparticles activated with Tm3+ and Yb3+ ions[J]. Rsc Advances, 2016, 6(45):39469-39479. doi: 10.1039/C6RA03075K
    [82] GHAMSARI M S, GAEENI M R, HAN W, et al.. Highly stable colloidal TiO2 nanocrystals with strong violet-blue emission[J]. J. Luminescence, 2016, 178:89-93. doi: 10.1016/j.jlumin.2016.05.036
    [83] SOUAMTI A, MART N I R, ZAYANI L, et al.. Blue up-conversion emission of Yb3+-doped langbeinite salts[J]. Optical Materials, 2016, 53:190-194. doi: 10.1016/j.optmat.2016.01.052
    [84] WANG G, GAO L, ZHU H, et al.. Hydrothermal synthesis of blue-emitting YPO4:Yb3+ nanophosphor[J]. Frontiers of Materials Science, 2016, 10(2):197-202. doi: 10.1007/s11706-016-0340-1
  • 加载中
图(11)
计量
  • 文章访问数:  3105
  • HTML全文浏览量:  1324
  • PDF下载量:  831
  • 被引次数: 0
出版历程
  • 收稿日期:  2016-08-22
  • 修回日期:  2016-10-04
  • 刊出日期:  2017-02-01

目录

    /

    返回文章
    返回