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High-speed 850 nm vertical-cavity surface-emitting lasers with BCB planarization technique

HE Xiao-ying DONG Jian HU Shuai HE Yan LV Ben-shun LUAN Xin-xin LI Chong 胡 安琪 HU Zong-hai GUO Xia

何晓颖, 董建, 胡帅, 何艳, 吕本顺, 栾信信, 李冲, 胡宗海, 郭霞. 采用BCB平整技术的高速850 nm垂直面发射激光器[J]. 中国光学, 2018, 11(2): 190-197. doi: 10.3788/CO.20181102.0190
引用本文: 何晓颖, 董建, 胡帅, 何艳, 吕本顺, 栾信信, 李冲, 胡宗海, 郭霞. 采用BCB平整技术的高速850 nm垂直面发射激光器[J]. 中国光学, 2018, 11(2): 190-197. doi: 10.3788/CO.20181102.0190
HE Xiao-ying, DONG Jian, HU Shuai, HE Yan, LV Ben-shun, LUAN Xin-xin, LI Chong, 胡 安琪, HU Zong-hai, GUO Xia. High-speed 850 nm vertical-cavity surface-emitting lasers with BCB planarization technique[J]. Chinese Optics, 2018, 11(2): 190-197. doi: 10.3788/CO.20181102.0190
Citation: HE Xiao-ying, DONG Jian, HU Shuai, HE Yan, LV Ben-shun, LUAN Xin-xin, LI Chong, 胡 安琪, HU Zong-hai, GUO Xia. High-speed 850 nm vertical-cavity surface-emitting lasers with BCB planarization technique[J]. Chinese Optics, 2018, 11(2): 190-197. doi: 10.3788/CO.20181102.0190

采用BCB平整技术的高速850 nm垂直面发射激光器

doi: 10.3788/CO.20181102.0190
基金项目: 

National Natural Science Foundation of China 61335004

National Natural Science Foundation of China 61675046

National Natural Science Foundation of China 61505003

National Key R&D Program of China 2016YFB0400603

National Key R&D Program of China 2017YFB0400902

National Key R&D Program of China 2017YFF0104801

详细信息
    作者简介:
  • 中图分类号: TN248.4

High-speed 850 nm vertical-cavity surface-emitting lasers with BCB planarization technique

Funds: 

National Natural Science Foundation of China 61335004

National Natural Science Foundation of China 61675046

National Natural Science Foundation of China 61505003

National Key R&D Program of China 2016YFB0400603

National Key R&D Program of China 2017YFB0400902

National Key R&D Program of China 2017YFF0104801

More Information
  • 摘要: 垂直腔面发射激光器因其具有低阈值、低功耗、可实现高速调制等优势,广泛地应用于光通信和光互连等领域。寄生电容是影响激光器的调制带宽的主要因素之一。本文通过采用低k值的苯并环丁烯(BCB)平整技术有效地降低了垂直腔面发射激光器的寄生电容。详细研究了BCB平整技术的最优工艺参数,为未来高速垂直腔面发射激光器的制造技术提供参考。低k值BCB平整垂直腔面发射激光器在7 μm氧化孔径下3 dB小信号调制带宽可达15.2 GHz。
  • Figure  1.  (a) Simulation results of small signal modulation response for VCSELs with BCB and SiO2 passivation. The parasitic cutoff frequency can reach to 17.8 GHz and 10.6 GHz for BCB and SiO2-passivated VCSEL, respectively. (b)The measured small signal modulation response for VCSELs with BCB and SiO2 passivation. The -3dB bandwidth is 15.2 GHz and 9.85 GHz with the oxide aperture of 7 μm@6 mA, respectively, which indicates the parasitic capacitance limits the modulation frequency of the devices

    Figure  2.  (a) Schematic cross-sectional structure of high-speed VCSEL devices. (b)Top-view image of the high-speed VCSEL with coplanar GSG electrode structure

    Figure  3.  (a) Relationship between spin speed and film thickness of BCB. (b)Difference in aperture diameter(Δd) between lithography and BCB patterns at various exposure times. (c)Top-view images of the thin BCB layer before dry etching and (d)after dry etching

    Figure  4.  (a) Static P-I-V characteristics of BCB-planarized VCSELs with a 5 μm and 7 μm oxide aperture at room temperature. (b)Electrical-luminescence spectrum for the VCSEL at room temperature and current injection of 10.0 mA

    Figure  5.  Small-signal modulation response at room temperature at different bias currents for the BCB-planarized VCSEL with (a)5 μm and (b)7 μm oxide aperture

    Figure  6.  (a) Plot of the resonance frequency for the VCSELs with 5 μm and 7 μm oxide aperture versus the square root of the current injection above the threshold current at room temperature. (b)Damping rate versus resonance frequency square for the VCSELs with 5 μm and 7 μm oxide aperture at room temperature

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出版历程
  • 收稿日期:  2017-11-17
  • 修回日期:  2017-12-16
  • 刊出日期:  2018-04-01

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