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ZnO/ZnS核壳纳米线界面缺陷的形成及发光特性研究

赵海霞 方铉 王颜彬 房丹 李永峰 王登魁 王晓华 楚学影 张晓东 魏志鹏

赵海霞, 方铉, 王颜彬, 房丹, 李永峰, 王登魁, 王晓华, 楚学影, 张晓东, 魏志鹏. ZnO/ZnS核壳纳米线界面缺陷的形成及发光特性研究[J]. 中国光学(中英文), 2019, 12(4): 872-879. doi: 10.3788/CO.20191204.0872
引用本文: 赵海霞, 方铉, 王颜彬, 房丹, 李永峰, 王登魁, 王晓华, 楚学影, 张晓东, 魏志鹏. ZnO/ZnS核壳纳米线界面缺陷的形成及发光特性研究[J]. 中国光学(中英文), 2019, 12(4): 872-879. doi: 10.3788/CO.20191204.0872
ZHAO Hai-xia, FANG Xuan, WANG Yan-bin, FANG Dan, LI Yong-feng, WANG Deng-kui, WANG Xiao-hua, CHU Xue-ying, ZHANG Xiao-dong, WEI Zhi-peng. Formation of interface defects of ZnO/ZnS core-shell nanowires and its optical properties investigations[J]. Chinese Optics, 2019, 12(4): 872-879. doi: 10.3788/CO.20191204.0872
Citation: ZHAO Hai-xia, FANG Xuan, WANG Yan-bin, FANG Dan, LI Yong-feng, WANG Deng-kui, WANG Xiao-hua, CHU Xue-ying, ZHANG Xiao-dong, WEI Zhi-peng. Formation of interface defects of ZnO/ZnS core-shell nanowires and its optical properties investigations[J]. Chinese Optics, 2019, 12(4): 872-879. doi: 10.3788/CO.20191204.0872

ZnO/ZnS核壳纳米线界面缺陷的形成及发光特性研究

doi: 10.3788/CO.20191204.0872
基金项目: 

国家自然科学基金资助项目 11674038

吉林省科技发展计划项目 20160520117JH

吉林省科技发展计划项目 20170520118JH

吉林省科技发展计划项目 20160204074GX

吉林省科技发展计划项目 20160203015GX

长春理工大学科技创新基金 XJJLG-2016-11

长春理工大学科技创新基金 XJJLG-2016-14

中国科学院纳米器件与应用重点实验室开放基金 18JG01

详细信息
    作者简介:

    赵海霞(1993-), 女, 吉林蛟河人, 硕士研究生, 主要从事半导体材料光学方面研究。E-mail:599736811@qq.com

    方铉(1983-), 男, 吉林吉林人, 博士, 副研究员, 主要从事半导体材料与器件方面研究。E-mail:fangxuan110@126.com

  • 中图分类号: O474

Formation of interface defects of ZnO/ZnS core-shell nanowires and its optical properties investigations

Funds: 

National Natural Science Foundation of China 11674038

Developing Project of Science and Technology of Jilin Province 20160520117JH

Developing Project of Science and Technology of Jilin Province 20170520118JH

Developing Project of Science and Technology of Jilin Province 20160204074GX

Developing Project of Science and Technology of Jilin Province 20160203015GX

Innovation Foundation of Changchun University of Science and Technology XJJLG-2016-11

Innovation Foundation of Changchun University of Science and Technology XJJLG-2016-14

Open Foundation of Key Laboratory of Chinese Academy of Sciences Nano Device and Application 18JG01

More Information
  • 摘要: ZnO/ZnS核壳纳米结构因具有优异的光电特性,在光电子领域极具应用前景,其依靠核壳结构界面处载流子的束缚效应可更加有效地控制载流子的产生、传输和复合过程。为讨论ZnO/ZnS核壳结构界面状态及其相应的光学特性,生长了不同程度硫粉硫化的ZnO/ZnS核壳纳米线,再利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)及光致发光光谱(PL)等测试表征手段,分析并讨论经过不同程度硫粉硫化后的ZnO/ZnS核壳纳米线界面处的结构及其光学性质的变化。通过分析ZnO/ZnS核壳结构形貌发现,ZnS成功包覆ZnO纳米线。随着硫化程度的增加,ZnO核结构被破坏,并在核壳界面处引入缺陷,导致形成具有不同结晶质量的ZnO/ZnS核壳纳米线结构,从而会影响ZnO/ZnS核壳纳米线的光学性质。结果表明,ZnO/ZnS核壳界面处缺陷较少时,对载流子的产生和传输具有一定的束缚作用,可以抑制非辐射复合效应,提高材料光学性能;当界面缺陷增加时,形成的缺陷能级则会降低材料的光学性能。

     

  • 图 1  不同剂量硫粉硫化的ZnO/ZnS核壳纳米线的SEM图像,(a)、(b)2 mg,(c)、(d)5 mg,(e)、(f)10 mg,插图为相应的直径分布图

    Figure 1.  SEM of ZnO/ZnS core-shell nanowires with different amounts of sulfur powder, (a)、(b)2 mg, (c)、(d)5 mg, (e)、(f)10 mg. Insets show the corresponding diameter distributions

    图 2  不同剂量硫粉硫化的ZnO/ZnS核壳纳米线TEM图像(a)2 mg,(c)5 mg,(e)10 mg;(b)、(d)、(f)为相应的SAED(Selected Area Electron Diffraction)图像

    Figure 2.  TEM images of ZnO/ZnS core-shell nanowires with different amounts of sulfur powder (a)2 mg, (c)5 mg, (e) 10 mg and corresbodingSAED image (b), (d), (f)

    图 3  纯ZnO纳米线(a)及不同剂量硫粉(b)2 mg,(c)5 mg,(d)10 mg硫化的ZnO/ZnS核壳纳米线HRTEM图像,插图为ZnO纳米线和ZnS纳米颗粒的晶格条纹间距

    Figure 3.  HRTEM images of(a)pure ZnO nanowires and ZnO/ZnS core-shell nanowires with different amounts of sulfur powder (b)2 mg, (c)5 mg, (d)10 mg; inset shows the lattice fringe space of ZnO nanowires and ZnS nanoparticles

    图 4  (a) 10 K时ZnO纳米线及不同剂量硫粉硫化的ZnO/ZnS核壳纳米线PL光谱,(b)10 K时UV区域光谱图,(c)ZnO纳米线及经过不同剂量硫粉硫化后10 K时UV区域PL光谱强度及半峰宽,(d)ZnO/ZnS硫化过程球棍模型

    Figure 4.  (a)PL spectra of ZnO nanowires and ZnO/ZnS core-shell nanowires with different amounts of sulfur powder at 10 K, (b)UV region spectra at 10 K, (c)PL spectral intensities and FWHMs of ZnO nanowires and ZnO/ZnS core-shell nanowires with different amounts of sulfur powder at 10 K, (d)ZnO/ZnS ball model with different sulfurization degrees

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出版历程
  • 收稿日期:  2018-11-27
  • 修回日期:  2019-01-09
  • 刊出日期:  2019-08-01

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