Fabrication and photoelectric properties of organic-inorganic broad-spectrum photodetectors based on Se microwire/perovskite heterojunction
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摘要: 针对目前高效、稳定的p型掺杂一直较难实现的问题，本文采用化学气相沉积方法制备出了高结晶质量的p型半导体材料Se微米线。同时，还制备出了基于单根Se微米线的光电探测器，其在紫外和可见光波段有较宽的响应范围，响应截止边为675 nm。该器件在5 V偏压下的峰值响应度可达2.8 mA/W（600 nm）。在此基础上，利用p型Se微米线与钙钛矿材料CH3NH3PbCl3制备了p-n结型器件，与单根Se微米线光电探测器相比，响应时间和响应度都有明显提升，尤其是异质结的响应度比纯Se微米线提高了850%。这一研究结果说明本文制备的有机无机复合结构p-n结非常有望应用到高性能光电探测器中。
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关键词:
- 光电探测器 /
- p型半导体 /
- 钙钛矿 /
- CH3NH3PbCl3
Abstract: Efficient and stable p-type doping is difficult to achieve. To solve this problem, high-quality p-type Se microwires were fabricated using chemical vapor deposition. A photodetector based on a single Se microtube shows broadband photoresponses with a peak responsivity of 2.8 mA/W at 600 nm under 5 V bias. The cutoff wavelength is estimated to be 675 nm. A p-n heterojunction photodetector using a p-type Se microwire and n-type CH3NH3PbCl3 was also fabricated. Compared to the single Se microtube, the p-n heterojunction photodetector shows obvious reduction in response time and 850% improvement in responsivity. The experimental results indicate that p-n junctions have promising applications in high-performance photodetectors.-
Key words:
- photodetector /
- p-type semiconductor /
- perovskite /
- CH3NH3PbCl3
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图 1 Se微米线的扫描电镜照片(a)低放大倍率; (b)单根Se微米线的放大图片。插图为微米线的断面图。(c)(d)分散在石英衬底上为不同倍率的MAPbCl3扫描电镜照片
Figure 1. SEM images of as-grown Se microwires on Si substrate. (a)Low magnification SEM image. (b)High magnification SEM image. The inset is the cross section of Se MW. (c), (d)The SEM images of as-grown MAPbCl3 on quartz substrate
图 2 (a) Se微米线的XRD图；(b)MAPbCl3薄膜的XRD图
Figure 2. (a)XRD pattern of Se MW. (b)XRD pattern of MAPbCl3 film
图 3 (a) 单根p-Se微米线MSM器件I-V曲线；(b)p-Se微米线与n-MAPbCl3异质结器件的I-V曲线
Figure 3. (a)I-V characteristics of MSM device based on single p-Se microwire in the dark. (b)I-V characteristics of p-n heterojunction based on Se MW and n-MAPbCl3 in the dark
图 4 不同器件在5 V反偏压下的光谱响应曲线(a)及600 nm光照下电流变化曲线(b)
Figure 4. (a)Spectral response of the devices at 5 V bias and (b)on/off switching upon 600 nm light illumination at 5 V bias
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