[1] TAKENAKA Y,KUZUMOTO M,YASUI K,et al.. High power and high focusing CW CO2 laser using an unstable resonator with a phase-unifying output coupler[J]. IEEE Quantum Electron,1991,27(11):2482-2487.
[2] 郭汝海,李殿军,杨贵龙,等. 大功率TEA CO2激光器非稳腔的设计与实验[J]. 中国光学与应用光学 ,2009,2(3):253-257. GUO R H,LI D J,YANG G L,et al.. Design and experiment of unstable resonator for high power TEA CO2 laser[J]. Chinese J. Opt.d Appl. Opt.,2009,2(3):253-257.(in Chinese)
[3] ZHOU R,LI E,LI H,et al.. Continuous-wave, 15.2 W diode-end-pumped Nd:YAG laser operating at 946 nm[J]. Opt. Lett.,2006,31(12):1869-1871.
[4] 郭芳,樊仲维,张晶,等. 全固态准连续TEM00模Nd∶ YVO4/LBO绿光激光器[J]. 中国光学与应用光学 ,2009,2(4):358-363. GUO F,FAN ZH W,ZHANG J,et al.. All solid-state quasi-CW Nd∶ YVO4/LBO green laser with TEM00 operation[J]. Chinese J. Opt. Appl. Opt.,2009,2(4):358-363.(in Chinese)
[5] GAPONTSEV V,GAPONTSEV D,PLATONOV N,et al.. 2 kW CW ytterbium fiber laser with record diffraction-limitedbrightness . Conference on Lasers and Electro-Optics Europe,Munich Germany,12-17 June 2005:508.
[6] 王祥鹏,梁雪梅,李再金,等. 880 nm半导体激光器列阵及光纤耦合模块[J]. 光学 精密工程 ,2010,18(5):1021-1027. WAN G X P,LIANG X M,LI Z J,et al.. 880 nm semiconductor laser diode arrays and f iber coupling module[J]. Opt. Precision Eng.,2010,18(5):1021-1027.(in Chinese)
[7] 顾媛媛,冯广智,单肖楠,等. 808 nm和980 nm半导体激光迭阵波长耦合技术[J]. 光学 精密工程 ,2009,17(1):8-13. GU Y Y,FENG G Z,SHAN X N,et al.. 808 nm and 980 nm high power laser diode stack with wavelength coupling[J]. Opt. Precision Eng.,2009,17(1):8-13.(in Chinese)
[8] KARLSEN S R,PRICE R K,REYNOLDS M,et al.. 100 W 105 μm 0.15 NA fiber coupled laser diode module[J]. SPIE,2009,7198:71980T.
[9] 王烨,张岩,秦莉,等. 高功率半导体激光器列阵封装引入应变的测量[J]. 光学 精密工程 ,2010,18(9):1951-1958. WANG Y,ZHANG Y,QIN L,et al.. Measurement of packaging-indeced strain in high power diode laser bar[J]. Opt. Precision Eng.,2010,18(9):1951-1958.(in Chinese)
[10] 顾媛媛,彭航宇,王祥鹏,等 .高功率高亮度半导体激光器件[J]. 红外与激光工程 ,2009,38(3):110-113. GU Y Y,PENG H Y,WANG X P,et al.. High power and high brightness diode laser device[J]. Infrared and Laser Eng.,2009,38(3):110-113.(in Chinese)
[11] 李再金,胡黎明,王烨,等. 808 nm含铝半导体激光器的腔面镀膜[J]. 光学 精密工程 ,2010,18(6):1251-1263. LI Z J,HU L M,WANG Y,et al..Facet coating for 808 nm Al-containing semiconductor laser diodes[J]. Opt. Precision Eng.,2010,18(6):1251-1263.(in Chinese)
[12] KUZNETSOV M,HAKIMI F,SPRAGUE R,et al.. Design and characteristics of high-power(>0.5 W CW) diode pumped vertical external cavity surface emittin semiconductor lasers with circular TEM00 beams[J]. IEEE Quantum Electron,1999,5(3):561-573.
[13] SEURIN J-F,XU G Y,WANG Q,et al.. High-brightness pump sources using 2D VCSEL arrays[J]. SPIE,2010,7615:76150F.
[14] HEALY S B,O'REILLY E P,GUSTAVSSON J S,et al.. Active region design for high-speed 850 nm VCSELs[J]. IEEE J. Quantum Electronics,2010,46(4):506-512.
[15] LIU G J,BO B X,MA X H,et al.. Study on high power semiconductor laser arrays and output beam shaping[J]. SPIE,2009,7382:738201.
[16] SIEGMAN A E. New developments in laser resonators[J]. SPIE,1990,1224:2-14.
[17] 李特,宁永强,孙艳芳,等 .980 nm高功率VCSEL的光束质量[J]. 中国激光 ,2007,34(4):641-645. LI T,NING Y Q,SUN Y F,et al.. Beam quality of 980 nm high power vertical-cavity surface-emitting laser[J]. Chinese J. Laser,2007,34(4):641-645.(in Chinese)
[18] 宁永强,李特,秦莉,等 .980 nm大功率垂直腔面发射激光器温度和远场分布特性[J]. 红外与激光工程 ,,2008,37(6):984-986. NING Y Q,LI T,QIN L,et al.. Temperature and far-field distribution characteristics of 980 nm high power VCSEL[J]. Infrared and Laser Eng.,2008,37(6):984-986.(in Chinese)
|