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皮秒激光透射率法表征高分子薄膜双光子吸收截面

苏少昌 王希军

苏少昌, 王希军. 皮秒激光透射率法表征高分子薄膜双光子吸收截面[J]. 中国光学(中英文), 2011, 4(1): 82-85.
引用本文: 苏少昌, 王希军. 皮秒激光透射率法表征高分子薄膜双光子吸收截面[J]. 中国光学(中英文), 2011, 4(1): 82-85.
SU Shao-chang, WANG Xi-jun. Measurement of TPA cross-section of organic material films based on picosecond laser nonlinear transmittance method[J]. Chinese Optics, 2011, 4(1): 82-85.
Citation: SU Shao-chang, WANG Xi-jun. Measurement of TPA cross-section of organic material films based on picosecond laser nonlinear transmittance method[J]. Chinese Optics, 2011, 4(1): 82-85.

皮秒激光透射率法表征高分子薄膜双光子吸收截面

基金项目: 

应用光学国家重点实验室应用光学基金资助项目(DA04Q05)

详细信息
    作者简介:

    苏少昌(1978—),男,河北人,博士研究生,主要从事大功率固体激光器的研究。E-mail:susc403@163.com 王希军(1963—),男,吉林人,研究员,博士后,博士生导师,主要从事大功率固体激光器及其相关技术的研究。 E-mail:xjwang@ciomp.ac.cn

    苏少昌(1978—),男,河北人,博士研究生,主要从事大功率固体激光器的研究。E-mail:susc403@163.com 王希军(1963—),男,吉林人,研究员,博士后,博士生导师,主要从事大功率固体激光器及其相关技术的研究。 E-mail:xjwang@ciomp.ac.cn

  • 中图分类号: O484.5

Measurement of TPA cross-section of organic material films based on picosecond laser nonlinear transmittance method

  • 摘要: 为了有效地测量有机薄膜的双光子吸收截面,针对较薄有机薄膜(约60 m)和有限激发光源功率,提出了基于非线性透过率测量法的皮秒激光脉冲激发等效多层膜非线性透过率法来实现双光子吸收截面的测量。首先在PC材料基板上旋涂偶氮染料薄膜,将带有偶氮薄膜的PC基板剪切成小块(20 mm 20 mm),并将5块叠加起来作为测量样品,然后采用LD泵浦的Nd∶ YVO4皮秒锁模激光器(脉冲宽度为20 ps、重复频率为56.8 MHz、输出波长为1 064 nm)激发样品。 在实验中,通过测量样品的非线性透过率,拟合偶氮样品的透过率曲线,最终得到了双光子吸收截面(634.2 GM)。与其他测量方法相比,此方法简单、有效。

     

  • [1] BIRNBAUM M. Semiconductor surface damage produced by ruby lasers[J]. J. Appl. Phys.,1965,36:3688-3689. [2] van DRIEL H M,SIPE J E,YOUNG J F. Laser-induced periodic surface structure on solids:a universal phenonmenon[J]. Phys. Rev. Lett.,1982,49(26):1955-1958. [3] CRAWFORD T H R,HAUGEN H K. Sub-wavelength surface structures on silicon irradiated by femtosecond laser pulses at 1300 and 2100 nm wavelengths[J]. Appl. Surf. Sci.,2007,253:4970-4977. [4] YOUNG J F,PRESTON J S,van DRIEL H M,et al.. Laser-induced periodic surface structure. II. experiments on Ge, Si, Al, and brass[J]. Phys. Rev. B,1983,27(2):1155-1172. [5] YONG J E,SIPE J E,van DRIEL H M. Laser-induced periodic surface structure. III. Fluence regimes,the role of feedback,and details of the induced topography in germanium[J]. Phys. Rev. B,1984,30(4):2001-2015. [6] 戴玉堂,徐刚,崔健磊, 等 .GaN基半导体材料的157 nm激光微刻蚀[J]. 中国激光 ,2009,36(12):3138-3142. DAI Y T,XU G,CUI J L,et al.. Micro etching of GaN-based semiconductor materials using 157 nm laser[J]. Chinese J. Lasers,2009,36(12):3138-3142.(in Chinese) [7] 石岩,张宏,徐春鹰.铜基粉末冶金摩擦材料激光表面改性处理[J]. 中国激光 ,2009,36(5):1246-1250. SHI Y,ZHANG H,XU CH Y. Laser surface modification of copper-based powder metallurgy friction materials[J]. Chinese J. Lasers,2009,36(5):1246-1250.(in Chinese) [8] 虞钢,王恒海,何秀丽.具有特定光强分布的激光表面硬化技术[J]. 中国激光 ,2009,36(2):480-486. YU G,WANG H H,HE X L. Laser surface hardening using determined intensity distribution[J]. Chinese J. Lasers,2009,36(2):1688-1691.(in Chinese) [9] HER T H,FINLAY R J,WU C,et al.. Microstructuring of silicon with femtosecond laser pulses[J]. Appl. Phys. Lett.,1998,73(12):1673-1675. [10] YOUNKIN R,CAREY J E,MAZUR E,et al.. Infrared absorption by conical silicon microstructures made in a variety of background gases using femtosecond-laser pulses[J]. J. Appl. Phys.,2003,93 (5):2626-2629. [11] 李平,王 煜,冯国进, 等 . 超短激光脉冲对硅表面微构造的研究[J]. 中国激光 ,2006,33(12):1688-1691. LI P,WANG Y,FENG G J,et al.. Study of silicon micro-structuring using ultra-short laser pulses[J]. Chinese J. Lasers,2006,33(12):1688-1691.(in Chinese) [12] CROUCH C H,CAREY J E,SHEN M,et al.. Infrared absorption by sulfur-doped silicon formed by femtosecond laser irradiation[J]. Appl. Phys. A,2004,79:1635-1641. [13] KARABUTOV A V,SHAFEEV G A,BADI N,et al.. 3D periodic structures grown on silicon by radiation of a pulsed Nd∶ YAG laser and their field emission properties[J]. Appl. Surf. Sci.,2006,252:4453-4456. [14] CROUCH C H,CAREY J E,WARRENDER J M,et al.. Comparison of structure and properties of femtosecond and nanosecond laser structured silicon[J]. Appl. Phys. Lett.,2004,84(11):1850-1852. [15] JIMNEZ-JARQUN J,HARO-PONIATOWSKI E,FERNNADEZ-GUASTI M,et al.. Laser induced micro-structuring of silicon under different atmospheres[J]. Radiat Eff. Defects Solids,2009,164(7-8):443-451. [16] PEDRAZA A J,FOWLKES J D,LOWNDES D H. Silicon microcolumn arrays grown by nanosecond pulsed-excimer laser irradiation[J]. Appl. Phys. Lett.,1999,74(16):2322-2324. [17] CHUANG T J. Multiple photo excited SF6 interaction with silicon surfaces[J]. J. Chem. Phys.,1981,74 (2):1453-1460. [18] SAJAD B,PARVIN P,BASSAM M. SF6 decomposition and layer formation due to excimer laser photoablation of SiO2 surface at gas-solid system[J]. J. Phys. D:Appl. Phys.,2004,37:3402-3408. [19] LOWNDES D H,FOWLKES J D,PEDRAZA A J. Early stages of pulsed-laser growth of silicon microcolumns and microcones in air and SF6[J]. Appl. Surf. Sci.,2000,154-155:647-658. [20] DOLGAEV S I,LAVRISHEV S V,LYALIN A A,et al.. Formation of conical microstructures upon laser evaporation of solids[J]. Appl. Phys. A,2001,73:177-181. [21] EMEL'YANOV V I,BABAK D V. Defect capture under rapid solidication of the melt induced by the action of femtosecond laser pulses and formation of periodic surface structures on a semiconductor surface[J]. Appl. Phys. A,2002,74:797-805. [22] BLOEMBERGEN N. Fundaments of laser-solid interactions[J]. Conference on Laser Solid Interactions and Laser Processing. AIP Conf. Proc.,New York,1979,50:1-9. [23] JANNITTI E,MALVEZZI A M,TONODELLO G. Analysis of the radiation backscattered from a laser-produced plasma[J]. J. Appl. Phys.,1975,46 (7):3096-3101.
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出版历程
  • 收稿日期:  2010-08-17
  • 修回日期:  2010-10-25
  • 刊出日期:  2011-02-25

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