掺碲硒化镓晶体的光学性能

古新安; 朱韦臻; 罗志伟; ANDREEV Y M; LANSKII G V; SHAIDUKO A V; IZAAK T I; SVETLICHNYI V A; VAYTULEVICH E A; ZUEV V V

掺碲硒化镓晶体的光学性能

1.
国立交通大学, 新竹 30010, 中国台湾;
2.
俄罗斯科学院西伯利亚分院气候与生态系统监测研究所, 托木斯克 634055, 俄罗斯;
3.
俄罗斯托木斯克洲立大学西伯利亚物理技术研究所, 托木斯克 634050, 俄罗斯;
4.
中国科学院长春光学精密机械与物理研究所, 吉林长春 130033

基金项目:

supported by RFBR Project(No.10-02-01452-a), Presidium SB RAS under the Project VII.63.3.1 of VII.63.3 Prog. and Join Proj. between Presidium SB RAS and Presidium NAS, Belarus No.10 of 2010.

详细信息

中图分类号: O734; TN304.2
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出版历程
- 收稿日期: 2011-09-21
- 修回日期: 2011-11-23
- 刊出日期: 2011-12-25

Optical properties of Te-doped GaSe crystal

1.
National Chiao Tung University, Hsinchu 30010, Taiwan, China;
2.
Institute of Monitoring of Climatic and Ecological System SB RAS, Tomsk 634055, Russia;
3.
Siberian Physics-technical Institute of TSU, Tomsk 634050, Russia;
4.
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

Funds:

supported by RFBR Project(No.10-02-01452-a), Presidium SB RAS under the Project VII.63.3.1 of VII.63.3 Prog. and Join Proj. between Presidium SB RAS and Presidium NAS, Belarus No.10 of 2010.

More Information

Author Bio:
KU Shin-an(1985-), Post-graduate student, National Chiao Tung University, Taiwan, China. His research interests include nonlinear optics and THz spectroscopy. E-mail:ksa7471@hotmail.com CHU Wei-chen(1989-), Master Student, National Chiao Tung University, Taiwan, China. Her research interests include nonlinear optics and THz spectroscopy. E-mail:s.daffodil@hotmail.com

KU Shin-an(1985-), Post-graduate student, National Chiao Tung University, Taiwan, China. His research interests include nonlinear optics and THz spectroscopy. E-mail:ksa7471@hotmail.com CHU Wei-chen(1989-), Master Student, National Chiao Tung University, Taiwan, China. Her research interests include nonlinear optics and THz spectroscopy. E-mail:s.daffodil@hotmail.com

摘要

摘要: 采用水平区熔法生长了碲(Te)掺杂浓度(质量百分比)分别为0.05%,0.1%,0.5%,1%,2%的硒化镓(GaSe)晶体,并分别对掺杂浓度为0.01%,0.07%,0.38%,0.67%,2.07%的GaSe∶Te晶体的光学性能进行了表征。首次研究了GaSe∶Te晶体中刚性层声子模式的转换。吸收光谱测试结果表明:当Te掺杂浓度小于0.38%时,振动中心位于0.59 THz附近的E'(2)刚性模式吸收峰强度可达最大值,这一过程与GaSe∶Te晶体光学性能的提高密切相关。但Te掺杂浓度的进一步提高会导致E'(2)刚性模式吸收峰强度逐渐减弱,当Te掺杂浓度为1%时,E'(2)刚性模式吸收峰基本消失。这两个过程与GaSe∶Te晶体光学质量的下降密切相关。因此,E'(2)刚性模式吸收强度达到最高时对应的掺杂浓度即是GaSe∶Te晶体中Te的最佳掺杂浓度,光整流产生太赫兹过程证实了此结论的正确性。
- 硒化镓 /
- 掺碲硒化镓 /
- 晶体生长 /
- 光学性能 /
- 太赫兹
Abstract: -GaSe crystals are grown with the stoichiometric GaSe of 0.05%, 0.1%, 0.5%, 1% and 2%(mass percent) Te and are characterized by GaSe∶Te(0.01%, 0.07%, 0.38%, 0.67% and 2.07%(mass percent)) crystals. The transformation of the rigid layer phonon modes with doping is studied for the first time. The absorption peak of the rigid mode E'(2) centered at ~0.59 THz is rising up in the intensity till reaching a maximal value on the first stage of the doping concentration less than 0.38%(mass percent). This process correlates well with the improvement in the optical property. Further doping is resulting in the decrease of the intensity till vanishing the E'(2) absorption peak at 1%(mass percent) Te. Simultaneously with the E'(2) absorption peak decreasing, the absorption peak of the rigid mode E'(2) centered at 1.78 THz is rising up in the intensity. The two processes correlate well with the degradation in the optical quality of GaSe∶Te crystal. The doping level that results in the highest intensity of the absorption peak of the rigid layer mode E'(2) is proposed as a criterion in the identification of the optimal Te-doping in GaSe crystal that is confirmed by THz generation via optical rectification.
- Te crystal /
- crystal growth /
- optical property /
- THz /

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参考文献(1)

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