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摘要: 激光诱导损伤阈值是大功率光学系统中重要参数,其数值大小对激光系统的输出功率与稳定性具有重要影响。为了突破损伤阈值对激光光学系统输出功率的限制,科研人员主要从制备薄膜工艺、激光特性、薄膜特性以及薄膜后工艺等方面开展研究。本文介绍了高反膜理论、制备工艺;综述了近十年来国内外对高反膜损伤研究的成果;阐述了激光特性、薄膜特性以及薄膜后工艺对薄膜损伤阈值的影响。在此基础上,对提高高反膜损伤阈值的研究和发展趋势进行了分析与展望。Abstract: The laser-induced damage threshold is an important parameter in high-power optical systems, and it has an important influence on the output power and stability of laser system. In order to break through the limitation of the damage threshold on the output power of the laser optical system, researchers have carried out research mainly on film preparation, laser characteristics, film properties and thin film post-treatment. In this paper, the theory and preparation of high reflective film are introduced; the research results of high anti-membrane damage at home and abroad in the past decade are reviewed; the effects of laser characteristics, thin film properties and thin film post-treatment on the film damage threshold are also discussed. On this basis, the research and development trend of improving high reflective film damage threshold are analyzed and prospected.
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Key words:
- laser damage /
- optical film /
- high reflective film /
- damage threshold
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表 1 20 μm、1 000 μm光斑直径时,辐照入射角对损伤阈值的影响[19]
Table 1. Influence of incidence irradiation angle on damage threshold at 20 μm and 1 000 μm spot diameter[19]
Max EFI at interface Normalized LIDT(1-on-1) Small beam size(20 μm) Large beam size(1 000 μm) 0° HR coating 91% 1 1 65° S-pol HR coating 20% 3.5 0.45 表 2 不同退火温度下的晶粒尺寸与损伤阈值[50]
Table 2. Grain sizes and damage thresholds at different annealing temperatures[50]
Annealing temperature/℃ Grain size/nm LIDT/(J·cm-2) as-deposited 17±2 44.1±3.8 300 18±1 60.7±6.4 400 24±1 76.6±3.2 500 32±3 57.5±3.2 表 3 国内外高反膜损伤研究成果
Table 3. Research results of high reflective film damage at home and abroad
年份 单位 激光特性 薄膜材料 损伤阈值/(J·cm-2) 2010[63] 同济大学 1 064 nm、3 ns HfO2、SiO2 105.2 2011[64] 汉诺威激光中心 1 064 nm、12 ns HfO2与Al2O3按一定比例混合、SiO2 175 2014[65] 同济大学 1 064 nm、10 ns HfO2、SiO2 234 2015[66] 布赫斯技术学院 1 064 nm、5.5 ns Ta2O5、SiO2 90 2016[67] 科罗拉多州立大学 1 030 nm、4 ns Ta2O5、HfO2、SiO2 174 2016[61] 同济大学 1 064 nm、10 ns 未知 >167 -
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