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紫外增强硅基成像探测器进展

张猛蛟 蔡毅 江峰 钟海政 王岭雪

张猛蛟, 蔡毅, 江峰, 钟海政, 王岭雪. 紫外增强硅基成像探测器进展[J]. 中国光学(中英文), 2019, 12(1): 19-37. doi: 10.3788/CO.20191201.0019
引用本文: 张猛蛟, 蔡毅, 江峰, 钟海政, 王岭雪. 紫外增强硅基成像探测器进展[J]. 中国光学(中英文), 2019, 12(1): 19-37. doi: 10.3788/CO.20191201.0019
ZHANG Meng-jiao, CAI Yi, JIANG Feng, ZHONG Hai-zheng, WANG Ling-xue. Silicon-based ultraviolet photodetection: progress and prospects[J]. Chinese Optics, 2019, 12(1): 19-37. doi: 10.3788/CO.20191201.0019
Citation: ZHANG Meng-jiao, CAI Yi, JIANG Feng, ZHONG Hai-zheng, WANG Ling-xue. Silicon-based ultraviolet photodetection: progress and prospects[J]. Chinese Optics, 2019, 12(1): 19-37. doi: 10.3788/CO.20191201.0019

紫外增强硅基成像探测器进展

doi: 10.3788/CO.20191201.0019
基金项目: 

国家自然科学基金资助项目 61471044

国家重点研发计划 2017YFC0110100

详细信息
    作者简介:

    张猛蛟(1980-), 男, 河北霸州人, 博士研究生, 2007年于上海应用物理研究所获得硕士学位, 现为华东光电集成器件研究所高级工程师, 主要从事EMCCD探测器和成像技术方面的研究。E-mail:zmj0806@163.com

    王岭雪(1973—),女,云南石屏人,工学博士,现为北京理工大学光电学院副教授,主要从事红外成像、图像处理和红外光谱方面的研究。E-mail:neobull@bit.edu.cn

  • 中图分类号: TN23

Silicon-based ultraviolet photodetection: progress and prospects

Funds: 

National Natural Science Foundation of China 61471044

National key research and development program 2017YFC0110100

More Information
  • 摘要: 硅基紫外成像探测技术具有可靠性好、集成度高、容易大面阵化、成本低等优势,成为探测领域的重要研究方向。随着硅半导体工艺的持续进步以及纳米科学的发展,利用半导体技术、荧光转换材料或者低维纳米结构来增强硅基探测器的紫外响应取得了长足的进步。本文综述了国内外硅基紫外增强成像探测器件、系统应用的进展,通过回顾器件发展的历史和对研究现状的分析,并结合紫外探测技术在天文物理、生化分析、电晕检测等领域的应用进展,探讨了硅基紫外成像探测技术发展的趋势和挑战。

     

  • 图 1  (a) 硅对紫外辐射的吸收深度。(b)探测器背照射表面处理后导带边空间分布[30]

    Figure 1.  (a)Penetration depth in Si versus incident radiation wavelength/photon energy. (b)Calculated spatial dependence of the conduction band edge near the backside of a CCD for various p+ doping levels and profiles[30]

    图 2  硅材料的折射率

    Figure 2.  Refractive index of silicon at wavelength ranging from 210~830 nm

    图 3  (a) 荧光转换紫外增强原理;(b)发光角度示意图

    Figure 3.  (a)Ultraviolet enhancement principle based on light conversion. (b)Schematic diagram to show light emission angle

    图 4  (a) PVD制备的Lumogen膜TEM图[49];(b)EuHD-PMMA膜在可见光和紫外光照射下的图像[58];(c)旋涂在石英基底上的钙钛矿量子点膜在日光和紫外光照射下的图像;(d)钙钛矿量子点薄膜增强的EMCCD;(e)360 nm紫外光成像(左),右图为中心区域的放大图像;(f)电晕放电宽光谱成像和日盲紫外成像

    Figure 4.  (a)SEM image of an Lumogen coating by PVD[49]; (b)Photographs of a quartz substrate coated with EuDH doped PMMA under ambient visible light and UV illuminations[58]; (c)Photographs of quartz substrate coated PQDCF under ambient daylight, and under a UV 365 nm lamp; (d)PQDCF coated EMCCD; (e)Digital output image of the EMCCD camera when the resolution test chart is illuminated by a 360 nm monochrome light. The right image is the enlarged central part of the left picture size in 100×100 pixels; (f)The broadband image of corona discharge equipment in operation, and the solar-blind UV image of the discharge spark

    图 5  硅基低维材料探测器结构示意图。(a)硅基石墨烯探测器[76];(b)β-Ga2O3/p-Si异质结探测器[77];(c)MoS2/Si异质结探测器[79]; (d)TiO2纳米线/p-Si异质结探测器[80];(e)石墨烯MoS2/WSe2三明治结构光电器件[86];(f)硅基石墨烯/胶体量子点异质结388×288探测器阵列[87]

    Figure 5.  (a)Photodetector based on rGO/n-Si p-n vertical heterojunction[76]; (b)Schematic diagram of the fabricated b-Ga2O3/p-Si heterojunction structure[77]; (c)Schematic illustration of a MoS2/Si heterojunction device[79]; (d)Schematic illustration of a TiO2 nanorod arrays/n-Si heterojunction device[80]; (e)Schematic and optical image of MoS2/WSe2 junction sandwiched between top and bottom graphene electrodes[86]; (f)CMOS integration of CVD graphene with 388×288 pixel image sensor read-out circuit[87]

    图 6  哈勃望远镜第三代广域照相机的背照射式紫外CCD探测器装配图

    Figure 6.  Assembly drawing of back-illuminated UV CCD detector for Hubble telescope third-generation camera

    图 7  (a) 阿司匹林药物包衣均匀性分析,无包衣片剂(上)、包衣片剂(中)、包衣破损药物片剂(下)的可见图像(左)和365 nm紫外光照射下的吸收图像(右)[95];(b)降血糖药物盐酸二甲双胍(500 mg)在0.1 mL/mol盐酸溶液(含2 g/mL氯化钠和50 mM磷酸二氢钾)中的溶解过程,可见透射吸收图像(上),紫外透射吸收图像(下)[5]

    Figure 7.  (a)Image analysis of representative ASA tablets with either homogeneous or inhomogeneous coatings, photograhp and UV imaging of uncoated ASA tablet(top), coated ASA tablet(middle) and coated ASA tablet with coating defectes(bottom)[95]; (b)UV and visible absorbance maps obtained for Glucophage SR, 500 mg metformin HCl tablet in 0.1 M HCl containing 2.0 g/L NaCl and 50 mM KH2PO4[5]

    图 8  紫外成像的电晕检测应用。(a)电晕探测仪器原理;(b)电晕放电图像:日盲图像(左上),可见图像(左下),融合图像(右);(c)太阳光谱与电晕放电光谱;(d)南非UViRCO公司的CoroCAM 8多光谱电晕成像仪;(e)以色列Ofil公司的Luminar手持紫外成像仪

    Figure 8.  Application of UV imaging in corona detection. (a)Schematic diagram of corona discharge detector; (b)Corona discharge image: solar blind image(upper left), visible image(lower left), fusion image(right); (c)Solar spectrum and corona discharge spectrum; (d)Multi-spectral corona imager CoroCAM 8 of UViRCO, South Africa; (e)Luminar hand held UV imager of Ofil, Israel

    图 9  紫外成像的军事应用。(a)AN/AAR-54(V)紫外告警系统;(b)AN/AAR-57(V)紫外告警系统;(c)直升机上安装的AN/AAR-57(V);(d)美国太空跟踪与监视系统卫星示意图;(e)枪、炮口的可见紫外叠加图

    Figure 9.  Application of UV imaging in military. (a)The photograph of AN/AAR-54(V); (b)The photograph of AN/AAR-57(V); (c)AN/AAR-57(V) in helicopter; (d)The schematic of space tracking and surveillance system; (e)UV-visible fusion image of firing

    表  1  硅基低维材料探测器的性能对比

    Table  1.   Comparison of the characteristic parameters of the photodetectors based on silicon and low dimension materials

    探测器类型 波长/nm 光响应电流A/W 探测率(Jonmes) 响应时间 参考文献
    rGO/n-Si 365~600 1.52 -- 0.002/0.0037 ms [76]
    β-Ga2O3/p-Si 254(solar-blind UV) 370 - 1.79 s [77]
    MoS2/Si 300~1 200 11.9 2.1×1010 30.5/71.6 μs [78]
    MoS2/Si 250~1 200 23.1 1.63×1012 21.6/65.5 μs [79]
    TiO2/n-Si 300~600 0.3 - 18.5/19.1 ms [80]
    TiO2/p-Si 365~980 468 1.96×1014 50/50 ms [81]
    ZnO/p-Si 365 101.2 - 0.44/0.59 s [82]
    Bi2Se3/Si 365~1 100 24.28 4.39×1012 2.5/5.5 μs [83]
    WS2/Si 370~1 064 0.7 2.7×109 4.1/4.4 s [84]
    In2Te3/Si 370~1 064 137 4.74×1010 6/8 ms [85]
    下载: 导出CSV

    表  2  紫外增强硅基成像探测器的3种主要技术路线

    Table  2.   Three main technical routes for UV-enhanced silicon detectors

    探测器类型 技术路线的特点 优点 缺点 发展方向
    半导体工艺紫外增强CCD和CMOS 通过背照射、紫外窗口避免多晶、金属电极对紫外辐射的吸收,配合表面浅结处理增强器件紫外响应 面阵大、探测器内量子效率高、光谱响应宽 背照射和表面处理工艺复杂,成本高。紫外灵还敏需要特殊的增透处理,使可见和近红外波段效率降低 扩展EUV波段响应,发展高灵敏紫外EMCCD、sCMOS器件
    荧光转换材料紫外增强硅探测器 利用荧光转换材料对紫外辐射吸收并发射与硅探测器工作光谱一致光子的特性,增强硅探测器紫外响应 工艺简单、成本低、面阵大、光谱响应宽 性能取决于荧光转换材料,EUV波段的光谱响应性能提升较少 发展光学性能好,荧光效率高的发光材料,突破荧光产率100%限制
    低维材料硅基紫外探测器 在硅基底上制备低维材料,形成异质结突破硅材料带隙限制 单项性能指标优异,光谱响应超宽且可同窄波段日盲紫外响应 探测器外量子效率不高、以单元器件为主、综合性能偏低 发展多层高效率、高填充比面阵器件,优化材料制备和集成工艺
    下载: 导出CSV
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  • 收稿日期:  2018-04-03
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